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浏览/检索结果: 共24条，第1-10条 帮助 限定条件 专题：苏州纳米技术与纳米仿生研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2018 作者:  Xing, Yao;  Li, Mo;  Wang, Wen-Jie;  Zhang, Yuan-Tao;  Du, Guo-Tong 收藏  |  浏览/下载：38/0  |  提交时间：2019/03/27 Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes 期刊论文 CHINESE PHYSICS B, 2018 作者:  Xing, Yao;  Liu, Shuang-Tao;  Liang, Feng;  Liu, Wei;  Zhu, Jian-Jun 收藏  |  浏览/下载：32/0  |  提交时间：2019/03/27 Thermal analysis of GaN-based laser diode mini-array 期刊论文 CHINESE PHYSICS B, 2018 作者:  Li, De-Yao(李德尧);  Hu, Jun-Jie(胡俊杰);  Yang, Hui(杨辉);  Zhang, Li-Qun(张立群);  Liu, Jian-Ping(刘建平) 收藏  |  浏览/下载：52/0  |  提交时间：2019/03/27 Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2018 作者:  Xiang, Jianyong;  Zhao, Zhisheng;  Tian, Yongjun;  Liu, Zhongyuan;  Zeng, Zhongming(曾中明) 收藏  |  浏览/下载：33/0  |  提交时间：2019/03/27 Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide 期刊论文 CHINESE PHYSICS B, 2017 作者:  Liang, Feng;  Zhao, De-Gang;  Jiang, De-Sheng;  Liu, Zong-Shun;  Zhu, Jian-Jun 收藏  |  浏览/下载：12/0  |  提交时间：2018/02/05 Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2017 作者:  Zhang, Feng（张峰）;  Ikeda, Masao;  Zhang, Shuming（张书明）;  Liu, Jianping（刘建平）;  Tian, Aiqin（田爱琴) 收藏  |  浏览/下载：28/0  |  提交时间：2018/02/06 Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence 期刊论文 APPLIED PHYSICS LETTERS, 2017 作者:  Wen, Pengyan（温鹏雁）;  Liu, Jianping（刘建平）;  Zhang, Shuming（张书明）;  Zhang, Liqun（张利群）;  Ikeda, Masao 收藏  |  浏览/下载：18/0  |  提交时间：2018/02/05 Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials 期刊论文 CHINESE PHYSICS B, 2017 作者:  Yang, Jing;  Zhao, De-Gang;  Jiang, De-Sheng;  Chen, Ping;  Liu, Zong-Shun 收藏  |  浏览/下载：20/0  |  提交时间：2018/02/05 Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region 期刊论文 OPTICS EXPRESS, 2017 作者:  Tian, Aiqin(田爱琴);  Liu, Jianping(刘建平);  Zhang, Liqun(张利群);  Li, Zengcheng(李增成);  Ikeda, Masao 收藏  |  浏览/下载：30/0  |  提交时间：2018/02/05 Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth 期刊论文 APPLIED PHYSICS LETTERS, 2017 作者:  Tian, Aiqin（田爱琴）;  Liu, Jianping（刘建平）;  Zhang, Liqun（张立群）;  Jiang, Lingrong;  Ikeda, Masao 收藏  |  浏览/下载：20/0  |  提交时间：2018/02/06