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EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR 期刊论文
MODERN PHYSICS LETTERS B, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887
Zhang, B; Chen, J; Wang, X; Wu, AM; Luo, JX; Wang, X; Zhang, MA; Wu, YX; Zhu, JJ; Yang, H
收藏  |  浏览/下载:9/0  |  提交时间:2011/11/04
Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: 77808-77808
Gu, Y; Zhang, YG(张永刚); Li, AZ; Wang, K; Li, C; Li, YY
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/24
Oxidation process of SiGe on SOI substrates 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 16, 页码: 5627-5631
Jin, B; Wang, X; Chen, J; Zhang, F; Cheng, XL; Chen, ZJ
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/24
Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 卷号: 7, 期号: 4-6, 页码: 393-397
Di, ZF; Zhang, M; Liu, WL; Lin, CL; Chu, PK
收藏  |  浏览/下载:19/0  |  提交时间:2012/03/24
Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 1-2, 页码: 96-102
Lei, HP; Wu, HZ; Lao, YF; Qi, M; Li, AZ; Shen, WZ
收藏  |  浏览/下载:17/0  |  提交时间:2012/03/24
DEPOSITION AND MODIFICATION OF TITANIUM NITRIDE BY ION-ASSISTED ARE DEPOSITION 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 卷号: 13, 期号: 3, 页码: 1658-1664
BENDAVID, A; MARTIN, PJ; WANG, X; WITTLING, M; KINDER, TJ
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/25


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