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| Effects of a carbon implant on thermal stability of Ni0:95(Pt0:05)Si 期刊论文 Journal of Semiconductors, 2015 作者: Zhao LC(赵利川); Feng S(冯帅); Zhang QZ(张青竹); Yan J(闫江) 收藏  |  浏览/下载:8/0  |  提交时间:2016/05/31 |
| Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films 期刊论文 Microelectronic engineering, 2015 作者: Liu QB(刘庆波); Ke XX(柯星星); Guo YL(郭奕栾); Zhao C(赵超); Wang GL(王桂磊) 收藏  |  浏览/下载:11/0  |  提交时间:2016/05/31 |
| A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process 期刊论文 Chinese Physcs B, 2013 作者: Xu GB(许高博); Xu QX(徐秋霞); Yin HX(殷华湘) 收藏  |  浏览/下载:10/0  |  提交时间:2014/10/30 |
| Effects of carbon pre-silicidation implant into Si substrate on NiSi 期刊论文 Microelectronic engineering, 2013 作者: Chou ZJ(仇志军); Luo J(罗军); Deng J(邓坚) 收藏  |  浏览/下载:5/0  |  提交时间:2014/10/30 |
| Variation of Schottky barrier height induced by dopant segregation 期刊论文 Microelectronic engineering, 2013 作者: Chou ZJ(仇志军); Luo J(罗军); Deng J(邓坚) 收藏  |  浏览/下载:9/0  |  提交时间:2014/10/30 |
| Characterization of HfSiAlON/MoAlN PMOSFET Fabricated by Using a Novel Gate-Last Process 期刊论文 Chinese Physcs Letters, 2013 作者: Yin HX(殷华湘); Xu GB(许高博); Xu QX(徐秋霞) 收藏  |  浏览/下载:7/0  |  提交时间:2014/10/30 |
| A modified scheme to tune the Schottky Barrier Height of NiSi by means of dopant segregation technique 期刊论文 Vacuum, 2013 作者: Zhao C(赵超); Deng J(邓坚); Liu ZB(刘庄波); Luo J(罗军) 收藏  |  浏览/下载:7/0  |  提交时间:2014/10/30 |
| Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2011 作者: Xu QX(徐秋霞) 收藏  |  浏览/下载:8/0  |  提交时间:2012/11/16 |
| ION IMPLANT COMPENSATION OF TENSILE-STRESS IN THICK SILICON-NITRIDE FILMS FOR X-RAY MASKS 外文期刊 1989 作者: QINGYUN, D; LIANKUI, Z; MENGZHEN, C; JUNRU, M 收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
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