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长春光学精密机械与... [23]
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期刊论文 [16]
会议论文 [5]
学位论文 [2]
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2022 [2]
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专题:长春光学精密机械与物理研究所
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Modulating Charge Transport from Thermally Activated to "Band-Like" Through Interfacial Bottom-Up Binding Capability of Bilayer Polymer Dielectrics¥Y. Zheng, H. Lin, T. Jiang, D. Zhu, S. Qi, W. Li, L. Li, D. Ji and W. Hu¥2022¥1616301X¥The disordered chain arrangement of polymer dielectrics has complex both internal and external effects on system performance, which generally stimulates the weak acquisition and grain boundaries of vapor-deposited organic small molecule films (VDOSMFs) with thermally activated charge transport. As a result, achieving "band-like" transmission of VDOSMs on polymer dielectrics is attempting to prove to be a major challenge. Three types of bi-polymer dielectrics are developed to modulate charge transport from thermally activated mode to "band-like" transport at the interfacial level. The bottom consisting of a polyimide layer is critical to interfacial modulation, which shows the selectively binding capability with up-dielectric layers to realize the modulation of charge transport, as corroborated by interface characterization and density functional-based tight-binding calculation. The findings provide an effective strategy for modulating the charge transport through polymer dielectric engineering and also recommend a podium to further comprehend the electrical characteristics of small molecules in organic thin-film transistors. 2022 Wiley-VCH GmbH.¥internal-pdf://1153944661/Modulating Charge Transport from Thermally Act.pdf¥10.1002/adfm.202211742¥https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/adfm.202211742?download=true¥ei
期刊论文
1616301X, 2022
作者:
Y. Zheng
;
H. Lin
;
T. Jiang
;
D. Zhu
;
S. Qi
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2023/06/14
Modulating Charge Transport from Thermally Activated to "Band-Like" Through Interfacial Bottom-Up Binding Capability of Bilayer Polymer Dielectrics
期刊论文
1616301X, 2022
作者:
Y. Zheng
;
H. Lin
;
T. Jiang
;
D. Zhu
;
S. Qi
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2023/07/17
Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix
期刊论文
Nature Nanotechnology, 2021, 卷号: 16, 期号: 11, 页码: 1231-1236
作者:
W. Meng
;
F. Xu
;
Z. Yu
;
T. Tao
;
L. Shao
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  |  
浏览/下载:9/0
  |  
提交时间:2022/06/13
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:
L.Wang
;
L.Chen
;
S.L.Wong
;
X.Huang
;
W.G.Liao
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浏览/下载:0/0
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提交时间:2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics
Study on the Photoresponse Characteristics of Organic Light Emitting Field-Effect Transistors
期刊论文
Journal of Physical Chemistry C, 2018, 卷号: 122, 期号: 27, 页码: 15190-15197
作者:
Li, D. W.
;
Hu, Y. S.
;
Guo, X. Y.
;
Lv, Y.
;
Zhang, N.
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  |  
浏览/下载:3/0
  |  
提交时间:2019/09/17
thin-film transistors
up-conversion devices
phototransistors
performance
photodetectors
ultraviolet
graphene
gain
electroluminescence
transport
Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
期刊论文
Materials, 2017, 卷号: 10, 期号: 1
作者:
Ning, H. L.
;
X. Z. Liu
;
H. K. Zhang
;
Z. Q. Fang
;
W. Cai
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  |  
浏览/下载:15/0
  |  
提交时间:2018/06/13
All-Aluminum Thin Film Transistor Fabrication at Room Temperature
期刊论文
Materials, 2017, 卷号: 10, 期号: 3
作者:
Yao, R. H.
;
Z. K. Zheng
;
Y. Zeng
;
X. Z. Liu
;
H. L. Ning
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浏览/下载:18/0
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提交时间:2018/06/13
Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes
期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 6
作者:
Zhang, N.
;
Y. S. Hu
;
J. Lin
;
Y. T. Li and X. Y. Liu
收藏
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浏览/下载:16/0
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提交时间:2017/09/11
Influence of high frequency spectrum of photoelectric measurement equipment images to the subjective evaluation
期刊论文
Guangxue Xuebao/Acta Optica Sinica, 2016, 卷号: 36, 期号: 4
作者:
Zhang, N.
;
X. Shen
;
L. Ye and Y. Song
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浏览/下载:14/0
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提交时间:2017/09/11
Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors
期刊论文
Chinese Physics B, 2015, 卷号: 24, 期号: 10, 页码: 5
作者:
Wu, S. H.
;
N. Zhang
;
Y. S. Hu
;
H. Chen
;
D. P. Jiang and X. Y. Liu
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浏览/下载:18/0
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提交时间:2016/07/15
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