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Low-temperature study of neutral and charged excitons in the large-area monolayer WS2 期刊论文
Japanese Journal of Applied Physics, 2018
作者:  Liu, Xinke;  Gu, Hong;  Chen, Le;  Lu, Youming;  Tian, Feifei(田飞飞)
收藏  |  浏览/下载：116/0  |  提交时间：2019/03/27
Dynamics of low temperature excitons in Fe-doped GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018
作者:  Bai, Y.;  Zhou, T. F.(周桃飞);  Zhang, Y. M.;  Xu, K.(徐科);  Wang, J. F.(王建峰)
收藏  |  浏览/下载：11/0  |  提交时间：2019/03/27
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：17/0  |  提交时间：2017/03/11
Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition? 期刊论文
NANOSCALE, 2016, 卷号: 8, 期号: 13
作者:  Su, ZC;  Ning, JQ(宁吉强);  Deng, Z;  Wang, XH;  Xu, SJ
收藏  |  浏览/下载：22/0  |  提交时间：2017/03/11
Influence of lattice vibrations on luminescence and transfer of excitons in WS2monolayer semiconductors 期刊论文
Journal of Physics D: Applied Physics, 2016
作者:  Wang, X.H.;  Su, Z.C.;  Ning, J.Q.(宁吉强);  Wang, M.Z.;  Xu, S.J.
收藏  |  浏览/下载：12/0  |  提交时间：2017/03/11
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy 期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6
作者:  Bao, W;  Su, ZC;  Zheng, CC;  Ning, JQ(宁吉强);  Xu, SJ
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/11
Strong quantum confinement effect and reduced Frohlich exciton-phonon coupling in ZnO quantum dots embedded inside a SiO2 matrix 期刊论文
NANOSCALE, 2015, 卷号: 7, 期号: 41, 页码: 6
作者:  Ning, JQ（宁吉强）;  Zheng, CC;  Zhang, XH;  Xu, SJ
收藏  |  浏览/下载：27/0  |  提交时间：2015/12/31
Observations of exciton and carrier spin relaxation in Be doped p-type GaAs 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 11
作者:  Lu, SL (陆书龙)
收藏  |  浏览/下载：13/0  |  提交时间：2015/02/03
Scaling-induced enhancement of X-ray luminescence in CsI(Na) crystals 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 18
作者:  Zhang, JP(张锦平)
收藏  |  浏览/下载：13/0  |  提交时间：2014/01/15
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 期号: 5
作者:  S. M. Zhang（张书明）;  H. Yang(杨辉)
收藏  |  浏览/下载：18/0  |  提交时间：2013/01/22

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