CORC

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CORC

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Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power 期刊论文
chinese optics letters, 2006, 卷号: 4, 期号: 7, 页码: 413-415
作者:  Xiaohong Yang;  Qin Han;  Zhichuan Niu;  Yingqiang Xu;  Hongling Peng
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23
1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 11, 页码: art.no.111105
Han, Q; Yang, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, SY; Du, Y; Peng, LH; Zhao, H; Tong, CZ; Wu, RH; Wang, QM
收藏  |  浏览/下载：78/18  |  提交时间：2010/03/17
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679
作者:  Zhao DG
收藏  |  浏览/下载：1038/2  |  提交时间：2010/08/12
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
Xu SJ; Zheng LX; Cheung SH; Xie MH; Tong SY; Yang H
收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 期刊论文
international journal of modern physics b, 2002, 卷号: 16, 期号: 1-2, 页码: 165-172
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载：141/42  |  提交时间：2010/08/12
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 12, 页码: 1810-1812
Li Q; Xu SJ; Cheng WC; Xie MH; Tong SY; Che CM; Yang H
收藏  |  浏览/下载：79/7  |  提交时间：2010/08/12
Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN 期刊论文
journal of applied physics, 1999, 卷号: 85, 期号: 9, 页码: 6430-6433
Sun WH; Chen KM; Yang ZJ; Li J; Tong YZ; Jin SX; Zhang GY; Zhang QL; Qin GG
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12

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