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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Epitaxial growth  Ethylene  Growth rate  Morphology  Surface roughness   Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088101 Sun GS (Sun Guo-Sheng); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Yang T (Yang Ting); Wu HL (Wu Hai-Lei); Yan GG (Yan Guo-Guo); Zhao YM (Zhao Yong-Mei); Ning J (Ning Jin); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：172/19  |  提交时间：2010/09/07 3C-SiC  heteroepitaxial  multi-wafer  uniformity