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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides 期刊论文 acs appl mater interfaces, 2016, 卷号: 8, 期号: 24, 页码: 15574-15581 Yongtao Li; Yan Wang; Le Huang; Xiaoting Wang; Xingyun Li; Hui-Xiong Deng; Zhongming Wei; Jingbo Li 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10 High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang F (Zhang Feng); Sun GS (Sun Guosheng); Huang HL (Huang Huolin); Wu ZY (Wu Zhengyun); Wang L (Wang Lei); Zhao WS (Zhao Wanshun); Liu XF (Liu Xingfang); Yan GG (Yan Guoguo); Zheng L (Zheng Liu); Dong L (Dong Lin); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：16/0  |  提交时间：2012/02/22 Luminescence spectroscopy of ion implanted AlN bulk single crystal 期刊论文 半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 31-33 作者:  Ke Jianhong 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/23 Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4099-4104 Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Cui LJ (Cui Li-Jie); Li DL (Li Dong-Lin); Gao HL (Gao Hong-Ling); Zeng YP (Zeng Yi-Pine); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao) 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29 In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As   HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY 期刊论文 journal of crystal growth, 1994, 卷号: 136, 期号: 0, 页码: 306-309 YAN CH; SUN DZ; GUO HX; LI XB; ZU SR; HUANG YH; ZHENG YP; KONG MY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 DOUBLE-HETEROSTRUCTURE