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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior 期刊论文 aip advances, 2016, 卷号: 6, 期号: 2, 页码: 025305 Bahadir Kucukgok; Xuewang Wu; Xiaojia Wang; Zhiqiang Liu; Ian T. Ferguson; Na Lu 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/16 Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 19537 Zhiqiang Liu; Xiaoyan Yi; Zhiguo Yu; Gongdong Yuan; Yang Liu; Junxi Wang; Jinmin Li; Na Lu; Ian Ferguson; Yong Zhang 收藏  |  浏览/下载：12/0  |  提交时间：2017/03/16 Light extraction improvement of blue light-emitting diodes with a Metal-distributed Bragg reflector current blocking layer 期刊论文 applied physics a (materials science & processing), 2015, 卷号: 118, 页码: 863–867 Na Liu; Xiaoyan Yi; Li Wang; Xuejiao Sun; Lei Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li 收藏  |  浏览/下载：15/0  |  提交时间：2016/04/15 Design of Shallow Acceptors in GaN through Zinc–Magnium Codoping: First-Principles Calculation 期刊论文 Applied Physics Express, 2013, 卷号: 6, 期号: 4, 页码: 042104 Zhiqiang Liu, Andrew G. Melton, Xiaoyan Yi, Jianwei Wang, Bahadir Kucukgok, Jun Kang, Na Lu, Junxi Wang, Jinmin Li and Ian Ferguson 收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09 Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor 期刊论文 chinese physics letters, 2012, 卷号: 29, 期号: 8, 页码: 087303 Xu XN (Xu Xiao-Na); Wang XD (Wang Xiao-Dong); Li YQ (Li Yue-Qiang); Chen YL (Chen Yan-Ling); Ji A (Ji An); Zeng YP (Zeng Yi-Ping); Yang FH (Yang Fu-Hua) 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/18 Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer 期刊论文 materials research society symposium proceedings, 2012, 卷号: 1396, 页码: 15-19 Lu, Na; Liu, Zhiqiang; Guo, Enqing; Wang, Liancheng; Melton, Andrew; Ferguson, Ian 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07