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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition 期刊论文 superlattices and microstructures, 2016, 卷号: 91, 页码: 259-268 Fan Yang; Yuan-tao Zhang; Xu Han; Peng-chong Li; Jun-yan Jiang; Zhen Huang; Jing-zhi Yin; De-gang Zhao; Bao-lin Zhang; Guo-tong Du 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 Femtosecond laser lithography technique for submicron T-gate fabrication on positive photoresist 期刊论文 optical engineering, 2012, 卷号: 51, 期号: 5, 页码: 54303 Du, YD; Han, WH; Yan, W; Xu, XN; Zhang, YB; Wang, XD; Yang, FH; Cao, HZ; Jin, F; Dong, XZ; Zhao, ZS; Duan, XM; Liu, Y 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17 Optically controlled quantum dot gated transistors with high on/off ratio 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: art. no. 083503 Yang XH (Yang Xiaohong); Xu XL (Xu Xiulai); Wang XP (Wang Xiuping); Ni HQ (Ni Haiqiao); Han Q (Han Qin); Niu ZC (Niu Zhichuan); Williams DA (Williams David A.) 收藏  |  浏览/下载：69/2  |  提交时间：2010/04/22 III-V semiconductors  indium compounds  laser beam applications  nanoelectronics  photoelectric devices  photoelectricity  phototransistors  semiconductor quantum dots  I-N JUNCTIONS   Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文 applied physics express, 2010, 卷号: 3, 期号: 7, 页码: art. no. 072001 Huang ZL (Huang Zengli); Wang JF (Wang Jianfeng); Liu ZH (Liu Zhenghui); Xu K (Xu Ke); Yang H (Yang Hui); Cao B (Cao Bing); Han Q (Han Qin); Zhang GJ (Zhang Guiju); Wang CH (Wang Chinhua) 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/17 LIGHT-EMITTING-DIODES