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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Q-switched and mode-locked diode-pumped Nd : YVO4 laser with an intracavity composite semiconductor saturable absorber 期刊论文 optics and laser technology, 2008, 卷号: 40, 期号: 2, 页码: 243-246 Peng JY (Peng Ji-Ying); Wang BS (Wang Bao-Shan); Wang YG (Wang Yong-Gang); Miao JG (Miao Jie-Guang); Tan HM (Tan Hui-Ming); Qian LS (Qian Long-Sheng); Ma XY (Ma Xiao-Yu) 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/29 Q-switched mode-locking   Passive stabilization of a passively mode-locked Nd : GdVO4 laser by inverse saturable absorption 期刊论文 optics communications, 2008, 卷号: 281, 期号: 1, 页码: 141-145 Peng, JY; Miao, JG; Wang, YG; Wang, BS; Tan, HM; Qian, LS; Ma, XY 收藏  |  浏览/下载：54/0  |  提交时间：2010/03/08 passive stabilization  mode locked laser  SESAOC  BIBO crystal   High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns 期刊论文 optik, 2008, 卷号: 119, 期号: 14, 页码: 657-660 Peng, JY; Tan, HM; Wang, YG; Ma, XY; Miao, JG; Wang, BS; Qian, LS 收藏  |  浏览/下载：58/2  |  提交时间：2010/03/08 Microchip laser  Q-switched  High repetition rate  Lt In0.25Ga0.75As  GaAs   High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror 期刊论文 laser physics, 2007, 卷号: 17, 期号: 8, 页码: 1033-1036 Peng, JY (Peng, J. Y.); Wang, BS (Wang, B. S.); Wang, YG (Wang, Y. G.); Miao, JG (Miao, J. G.); Hao, EJ (Hao, E. J.); Tan, HM (Tan, H. M.); Qian, LS (Qian, L. S.); Ma, XY (Ma, X. Y.) 收藏  |  浏览/下载：82/0  |  提交时间：2010/03/29 SATURABLE-ABSORBER   High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror 期刊论文 optics and laser technology, 2007, 卷号: 39, 期号: 6, 页码: 1135-1139 Peng, JY (Peng, Ji-ying); Miao, JG (Miao, Jie-guang); Wang, YG (Wang, Yong-gang); Wang, BS (Wang, Bao-shan); Tan, HM (Tan, Hui-ming); Qian, LS (Qian, Long-sheng); Ma, XY (Ma, Xiao-yu) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 high-average-power   Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber 期刊论文 laser physics, 2006, 卷号: 16, 期号: 12, 页码: 1601-1604 Peng, JY (Peng, J. Y.); Tan, HM (Tan, H. M.); Wang, YG (Wang, Y. G.); Wang, BS (Wang, B. S.); Miao, JG (Miao, J. G.); Qian, LS (Qian, L. S.); Ma, XY (Ma, X. Y.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 SATURABLE ABSORBER   Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures 期刊论文 journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：108/4  |  提交时间：2010/08/12 InAs/GaAs self-organized quantum dots photoluminescence  molecular beam epitaxy  InGaAs capping layer  1.35 MU-M  OPTICAL-PROPERTIES  EMISSION  LAYER