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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：Atomic     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 卷号: 148, 期号: 1-4, 页码: 1002-1006 Zhao,J; Yu,YH; Mao,DS; Lin,ZX; Jiang,BY; Yang,GQ; Liu,XH; Zou,SC 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/25 VISIBLE PHOTOLUMINESCENCE  ROOM-TEMPERATURE  ELECTROLUMINESCENCE  LAYERS  GLASS   Synthesis and characterization of hydrogenated amorphous silicon-carbon films with blue-green emission 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 卷号: 127, 期号: 0, 页码: 337-340 Yu,YH; Wu,ZC; Ren,ZX; Liu,XH; Zou,SC; Wong,SP; Wilson,IH 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/25 ALLOYS  IR   GROWTH OF EPITAXIAL COSI2 ON SIMOX MATERIAL BY A SOLID-PHASE REACTION OF DEPOSITED TIN/CO/TI LAYERS 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 卷号: 96, 期号: 1-2, 页码: 352-355 LIU,P; ZHOU,ZY; LIN,CL; Zou,SC; ZHANG,RJ; LI,BZ; HEMMENT,PLF 收藏  |  浏览/下载：8/0  |  提交时间：2012/03/25 SILICON  CMOS  SI   FORMATION OF BURIED CARBON NITRIDE BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILM 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 卷号: 103, 期号: 3, 页码: 309-312 XIN,HP; LIN,CL; ZHU,SY; Zou,SC; SHI,XH; ZHU,H; HEMMENT,PLF 收藏  |  浏览/下载：20/0  |  提交时间：2012/03/25 STRUCTURAL-PROPERTIES  SILICON-NITRIDE  ION-BEAMS  SURFACES  N+   COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 卷号: 85, 期号: 1-4, 页码: 524-527 LOHNER,T; TOTH,Z; FRIED,M; KHANH,NQ; YANG,GQ; LU,LC; Zou,SC; HANEKAMP,LJ; VANSILFHOUT,A; GYULAI,J 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/25 THE ANNEALING BEHAVIOR OF ARGON AND BORON DUAL-IMPLANTED SILICON AND ITS ELECTRICAL PERFORMANCE 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 卷号: 59, 期号: 0, 页码: 1045-1048 ZHU,JL; LI,XN; ZHOU,ZY; YU,ZW; WU,XH; LIN,X; BENG,RZ 收藏  |  浏览/下载：6/0  |  提交时间：2012/03/25 JUNCTIONS  ION   STUDIES ON SI+(+)B+ DUAL IMPLANTATIONS INTO THE TOP SILICON LAYER OF SIMNI MATERIAL 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 卷号: 55, 期号: 1-4, 页码: 738-741 ZHANG,SK; LIN,CL; ZHOU,ZY; Zou,SC 收藏  |  浏览/下载：10/0  |  提交时间：2012/03/25 OXYGEN   NEAR-SURFACE DAMAGE CREATED IN SILICON BY BF2+ IMPLANTATION 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 卷号: 55, 期号: 1-4, 页码: 589-592 LI,XQ; LIN,CL; YANG,GQ; ZHOU,ZY; Zou,SC 收藏  |  浏览/下载：6/0  |  提交时间：2012/03/25 THE EFFECTS OF EPITAXY AND OXIDATION ON THE PROPERTIES OF SIMNI AND SIMOX MATERIALS 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 卷号: 55, 期号: 1-4, 页码: 746-749 LI,JH; LIN,CL; LIN,ZX; JIN,YQ; Zou,SC 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25 OXYGEN IMPLANTATION  DOSE OXYGEN  SILICON  CMOS