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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05 QUANTUM-WELL-STRUCTURE  ALGAN/GAN HETEROSTRUCTURE  YELLOW LUMINESCENCE  DEEP LEVELS  TRAP  PERFORMANCE  FREQUENCY  EPILAYERS  ORIGIN  DIODES   Hydrogenated amorphous silicon films with significantly improved stability 期刊论文 solar energy materials and solar cells, 2001, 卷号: 68, 期号: 1, 页码: 123-133 Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 amorphous silicon  stability  A-SI-H  CONSTANT PHOTOCURRENT METHOD  PERSISTENT PHOTOCONDUCTIVITY  URBACH EDGE  SOLAR-CELLS  GAP STATES  ABSORPTION  DENSITY  SPECTROSCOPY  INCREASE   Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103 Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy  photoluminescence  yellow luminescence  N-TYPE GAN  PERSISTENT PHOTOCONDUCTIVITY  THIN-FILMS  DOPED GAN  DEEP LEVELS  ORIGIN  PHOTOLUMINESCENCE  DEPENDENCE  VACANCIES  EPITAXY   Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 METASTABILITY  ANTISITE