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| Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者: Xu B
  收藏 | 浏览/下载：51/3 | 提交时间：2011/07/05
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| Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者: Liu K; Tan FR
收藏 | 浏览/下载：87/5 | 提交时间：2011/07/05
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| Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi)
收藏 | 浏览/下载：25/0 | 提交时间：2010/11/14
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| A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 034209
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Liu Y (Liu Yu); Xie L (Xie Liang); Wang ZG (Wang Zhan-Guo)
收藏 | 浏览/下载：154/28 | 提交时间：2010/04/22
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| Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏 | 浏览/下载：65/25 | 提交时间：2010/03/08
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| The synthesis of MDMO-PPV capped PbS nanorods and their application in solar cells 期刊论文
current applied physics, 2009, 卷号: 9, 期号: 5, 页码: 1175-1179
作者: Tan FR
收藏 | 浏览/下载：86/0 | 提交时间：2010/03/08
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| Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者: Yang JK; Wei TB; Duan RF
收藏 | 浏览/下载：73/3 | 提交时间：2010/03/08
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者: Ye XL; Xu B; Jin P
收藏 | 浏览/下载：90/0 | 提交时间：2010/04/11
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| Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏 | 浏览/下载：93/3 | 提交时间：2010/08/12
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| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 193-197
作者: Xu B
收藏 | 浏览/下载：49/0 | 提交时间：2010/08/12
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