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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 25, 页码: 253902 Hong, M; Yuan, GD; Peng, Y; Li, JM; Chen, HY; Zhang, Y; Liu, ZQ; Wang, JX; Cai, B; Zhu, YM; Chen, Y; Liu, JH 收藏  |  浏览/下载：18/0  |  提交时间：2015/04/02 Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 19, 页码: 193904 Chen, HY; Yuan, GD; Peng, Y; Hong, M; Zhang, YB; Zhang, Y; Liu, ZQ; Wang, JX; Cai, B; Zhu, YM; Li, JM 收藏  |  浏览/下载：61/0  |  提交时间：2015/04/02 High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114201 Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：23/0  |  提交时间：2010/12/05 AUGER RECOMBINATION  THRESHOLD CURRENT  DEPENDENCE  DEVICE   CARRIER LOSS RESULTING FROM AUGER RECOMBINATION IN INGAASP/INP DOUBLE HETEROJUNCTION LASER-DIODES - SPECTROSCOPY OF 950 NM HIGH-ENERGY EMISSION 期刊论文 ieee journal of quantum electronics, 1985, 卷号: 21, 期号: 6, 页码: 712-715 ZHUANG WH; ZHENG BZ; XU JY; LI YH; XU JH; CHEN PL 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15