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The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文
journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193
Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL
收藏  |  浏览/下载:83/0  |  提交时间:2010/08/12
CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS) 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1994, 卷号: 342, 期号: 1, 页码: 137-142
LI CJ; LI Z
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/15


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