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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503 作者:  Dong Z;  Huang BJ 收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05 optoelectronic integrated circuit  complementary metal-oxide-semiconductor technology  silicon-based light emitting device  electroluminescence  AVALANCHE BREAKDOWN  PHOTON-EMISSION  CURRENT-DENSITY  DIODES  MODEL  ELECTROLUMINESCENCE  SUPERLATTICES  EFFICIENCY  JUNCTIONS  LEDS   Effect of heavy boron doping on the electrical characteristics of SiGeHBTs 期刊论文 semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895 Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/29 HETEROJUNCTION BIPOLAR-TRANSISTORS   Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Shi SL (Shi S. L.); Beling CD (Beling C. D.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 DISLOCATIONS  DEGRADATION   Metal film effect on performance of very-small-aperture lasers 期刊论文 applied physics b-lasers and optics, 2006, 卷号: 82, 期号: 4, 页码: 595-598 Gan Q; Song G; Xu Y; Yang G; Wang Q; Gao J; Cao Q; Li Y; Chen L 收藏  |  浏览/下载：70/0  |  提交时间：2010/04/11 LIGHT  POWER   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：83/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION