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The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者:  Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li
收藏  |  浏览/下载:17/0  |  提交时间:2018/11/30
In situ plankton and fish detection based on optical gated sampling 期刊论文
applied optics, 2016, 卷号: 55, 期号: 18, 页码: 4850-4855
XIAOQUAN LIU; XINWEI WANG; YAN ZHOU; YULIANG LIU
收藏  |  浏览/下载:22/0  |  提交时间:2017/03/16
Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
ieee transactions on electron devices, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Liu, Yan; Yan, Jing; Wang, Hongjuan; Zhang,Qingfang; Liu, Mingshan; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan
收藏  |  浏览/下载:25/0  |  提交时间:2015/03/20
In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD 期刊论文
journal of crystal growth, 2012, 卷号: 347, 期号: 1, 页码: 7-10
Xie, XB; Zeng, XB; Yang, P; Wang, C; Wang, QM
收藏  |  浏览/下载:13/0  |  提交时间:2013/03/17
Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers 期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 1, 页码: art. no. 015013
Chen DY; Wei DY; Xu J; Han PG; Wang X; Ma ZY; Chen KJ; Shi WH; Wang QM
收藏  |  浏览/下载:45/1  |  提交时间:2010/03/08
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang)
收藏  |  浏览/下载:89/29  |  提交时间:2010/03/29
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载:47/0  |  提交时间:2010/03/29
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
journal of crystal growth, 2007, 卷号: 303, 期号: 2, 页码: 414-418
作者:  Zhang SM;  Yang H;  Zhu JJ;  Jiang DS;  Yang H
收藏  |  浏览/下载:42/0  |  提交时间:2010/03/29
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/29
Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate 期刊论文
applied physics a-materials science & processing, 2007, 卷号: 89, 期号: 1, 页码: 177-181
Sun J; Chen J; Wang X; Wang J; Liu W; Zhu J; Yang H
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/29
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