QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2000     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 Journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 作者:  Wang, HL;  Zhu, HJ;  Ning, D;  Wang, H;  Wang, XD 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Atomic hydrogen-assisted molecular beam epitaxy  Deep level transient spectroscopy  Deep level defects   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 期刊论文 compound semiconductors 1999, 2000, 期号: 166, 页码: 251-256 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Proof of inas/gaas self-organized quantum dot lasing and the experimental determination of local strain effect on the band structures 期刊论文 Compound semiconductors 1999, 2000, 期号: 166, 页码: 251-256 作者:  Wang, H;  Wang, HL;  Feng, SL;  Zhu, HJ;  Wang, XD 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：83/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION