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Variation of electronic structure with C content in Si1-x-yGexCy/Si(001) system 期刊论文
1999
Huang, M. C.; Wu, L. Q.; Zhu, Z. H.; 黄美纯
收藏  |  浏览/下载:2/0  |  提交时间:2013/12/12
Influence of crystal perfection on the reverse leakage current of the sige si p-n heterojunction diodes 期刊论文
Journal of crystal growth, 1999, 卷号: 201, 页码: 551-555
作者:  Liu, XF;  Liu, JP;  Li, JP;  Wang, YT;  Li, LY
收藏  |  浏览/下载:12/0  |  提交时间:2019/05/12
GSMBE grown In0.49Ga0.51P/(In)GaAs/GaAs high hole mobility transistor structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 201, 页码: 744-748
Chen, JX; Li, AZ; Yang, QK; Lin, C; Ren, YC; Jin, SR; Qi, M; Xu, HG; Chen, XJ
收藏  |  浏览/下载:18/0  |  提交时间:2012/03/25
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 551-555
作者:  Liu XF
收藏  |  浏览/下载:27/0  |  提交时间:2010/08/12
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Liu XF; Liu JP; Li JP; Wang YT; Li LY; Sun DZ; Kong MY; Lin LY
收藏  |  浏览/下载:4/0  |  提交时间:2010/11/15
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