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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：1996     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Pressure dependence of the electronic subband structure of strained in0.2ga0.8as/gaas mqws 期刊论文 Physica status solidi b-basic solid state physics, 1996, 卷号: 198, 期号: 1, 页码: 329-335 作者:  Li, GH;  Goni, AR;  Syassen, K;  Hou, HQ;  Feng, W 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Microstructures and room temperature mechanical properties of NiAl prepared by high pressure reaction sintering 期刊论文 Journal of Materials Science, 1996, 卷号: 31, 期号: 8, 页码: 1997-2007 T. Y. Cheng 收藏  |  浏览/下载：12/0  |  提交时间：2012/04/14 hydrostatic-pressure  ductility  improvement  toughness  strength  behavior  alloys   An investigation of the formation mechanisms of electric field domains in GaAs/AlAs superlattices 期刊论文 PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 卷号: 198, 期号: 1, 页码: 307 Sun, BQ; Jiang, DS; Liu, ZX; Zhang, YH; Liu, W 收藏  |  浏览/下载：12/0  |  提交时间：2013/09/17 SEMICONDUCTOR SUPERLATTICES  TRANSPORT   Bound phonons and bistability of donors in Ga1-xAlxAs:Te 期刊论文 http://dx.doi.org/10.1088/0256-307X/13/6/017, 1996 Lian, SY; 连世阳 收藏  |  浏览/下载：3/0  |  提交时间：2015/07/22 DX CENTERS  HYDROSTATIC-PRESSURE  GAAS   Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs 期刊论文 physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 329-335 Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/11/17 MULTIPLE QUANTUM-WELLS  HYDROSTATIC-PRESSURE  DEFORMATION POTENTIALS  EXCITON ABSORPTION  PHOTOLUMINESCENCE  SPECTROSCOPY  GAAS   An investigation of the formation mechanisms of electric field domains in GaAs/AlAs superlattices 期刊论文 physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 307-313 Sun BQ; Jiang DS; Liu ZX; Zhang YH; Liu W 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/17 SEMICONDUCTOR SUPERLATTICES  TRANSPORT   High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells 期刊论文 physical review b, 1996, 卷号: 54, 期号: 19, 页码: 13820-13826 Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM 收藏  |  浏览/下载：56/0  |  提交时间：2010/11/17 HYDROSTATIC-PRESSURE  EXCITON ABSORPTION  DEFORMATION POTENTIALS  LAYER SUPERLATTICES  BAND OFFSET  PHOTOLUMINESCENCE  GAAS  SPECTROSCOPY  DEPENDENCE  TEMPERATURE   Evidence of Gamma-X sequential resonant tunneling in GaAs/AlAs superlattices 期刊论文 applied physics letters, 1996, 卷号: 69, 期号: 4, 页码: 520-522 Sun BQ; Jiang DS; Liu ZX; Zhang YH; Liu W 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/17 ELECTRIC-FIELD DOMAINS  GAAS ALAS SUPERLATTICES  SEMICONDUCTOR SUPERLATTICES  OSCILLATIONS  TRANSPORT  MODEL  WELL   Photoluminescence of GaInP under high pressure 期刊论文 journal of applied physics, 1996, 卷号: 79, 期号: 9, 页码: 7177-7182 Dong JR; Li GH; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Kong MY; Wang ZJ 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/17 VAPOR-PHASE EPITAXY  HYDROSTATIC-PRESSURE  ORDERED GA0.5IN0.5P  GROWTH TEMPERATURE  DEPENDENCE  GAP  SPECTRUM  ENERGY   Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 期刊论文 applied physics letters, 1996, 卷号: 68, 期号: 12, 页码: 1711-1713 Dong JR; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Wang ZJ; Kong MY; Li GH 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/17 VAPOR-PHASE EPITAXY  GA0.5IN0.5P  DEPENDENCE  SPECTRUM  ENERGY  GROWTH