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Semiconductor laser device 专利
专利号: JP1991257887A, 申请日期: 1991-11-18, 公开日期: 1991-11-18
作者:  SEKO YASUJI
收藏  |  浏览/下载:7/0  |  提交时间:2020/01/18
Optical isolator 专利
专利号: JP1991085513A, 申请日期: 1991-04-10, 公开日期: 1991-04-10
作者:  TOGANO YUICHI
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/31
Monolithic temperature stabilized optical tuning circuit for channel separation in WDM systems utilizing tunable lasers 专利
专利号: US4993032, 申请日期: 1991-02-12, 公开日期: 1991-02-12
作者:  BRADLEY, ERIC M.
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/26
INTERNAL STRAIN AND LATTICE DEFORMATION OF MOLECULAR-BEAM-EPITAXY-GROWN GAINASSB ON GAAS SUBSTRATE 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 卷号: 9, 期号: 1-3, 页码: 157-161
BI, WG; LI, AH
收藏  |  浏览/下载:6/0  |  提交时间:2012/03/25
DETERMINATION OF REFRACTIVE-INDEX AND STUDY OF ABSORPTION IN WIDE GAP II-VI SEMICONDUCTOR SUPERLATTICES 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1991, 卷号: 111, 期号: 1-4, 页码: 807-810
SHEN, AD; CUI, J; CHEN, YL; WANG, HL; LI, AH
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/25
A SIMPLE METHOD FOR PREDICTION OF GAS-PERMEABILITY OF POLYMERS FROM THEIR MOLECULAR-STRUCTURE 期刊论文
polymer journal, 1991, 卷号: 23, 期号: 5, 页码: 417-425
JIA LD; XU JP
收藏  |  浏览/下载:18/0  |  提交时间:2011/03/03
LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 1991, 卷号: 30, 期号: 7, 页码: 1343-1347
GONG XY; YANG BH; MA YD; GAO FS; YU Y; HAN WJ; LUI XF; XI JY; WANG ZG; LIN LY
收藏  |  浏览/下载:19/0  |  提交时间:2010/11/15


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