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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 In-situ stress suppression of hydrogenated a-CNxfilm prepared via Ar gas introduction 期刊论文 Surface and Interface Analysis, 2016 作者:  Wang, Qi;  He, Deyan;  Zhang, Junyan 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/13 Compressive stress  Amorphous carbon  Amorphous films  Argon  Carbon films  Carbon nitride  Graphite  Hardness  Hydrogenation  Nitrides  Stresses  Ar plasmas  Carbon nitride films  Hydrogenated amorphous carbon nitride  Insitu stress  Nitrogen content  Raman  RMS roughness  Root mean square roughness   脱氮热导法测定钛中氩 会议论文 2012国际冶金及材料分析测试学术报告会(CCATM2012), 北京, 2012-10-31 朱跃进; 朱瑛才 收藏  |  浏览/下载：21/0  |  提交时间：2013/08/21 nitrogen-removing thermal conductivity  argon in titanium  argon content  argon releasing   The effect of Mg on the microstructure and electrochemical properties of La0.8-xGd0.2Mgx Ni3.3Co0.3Al0.1(x=0-0.4) hydrogen storage alloys 期刊论文 Gongneng Cailiao/Journal of Functional Materials, 2012, 卷号: 43, 期号: 18, 页码: 2450-2455 作者:  Guo, Xing-Bo;  Luo, Yong-Chun;  Gao, Zhi-Jie;  Zhang, Guo-Qing;  Kang, Long 收藏  |  浏览/下载：9/0  |  提交时间：2020/11/14 Aluminum  Argon  Cerium  Electrochemical properties  Gadolinium  Hydrogen  Hydrogen storage  Hydrogen storage alloys  Lithium compounds  Microstructure  X ray diffraction  Activation capability  Annealed alloys  Annealing treatments  Argon atmospheres  Charge-discharge cycle  Discharge capacities  Electrochemical measurements  Equilibrium pressure  High purity  Hydrogen absorption  Hydrogen absorption properties  Hydrogen storage capacities  Induction melting  Mg content  Plateau pressures   Hydrogen Variation in Molten Steel during LF Refining 会议论文 12th International Symposium on Eco-Materials Processing and Design, Chiang Mai, THAILAND, 2011-01-08 作者:  Ju, Jiantao;  Lv, Zhenlin;  Zhang, Minjuan;  Zhang, Zhaohui;  Yang, Jun 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/20 Hydrogen content  LF refining  Argon blowing   Effects and numerical analysis of argon gas flow on the oxygen concentration in czochralski silicon single crystal growth 期刊论文 Microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509 作者:  Zhang, ZC;  Ren, BY;  Chen, YH;  Yang, SY;  Wang, ZG 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Czochralski method  Growth from melt  Semiconductor silicon  Argon gas flow  Computer simulation  Oxygen content   Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载：27/0  |  提交时间：2010/11/15 Czochralski method  growth from melt  semiconductor silicon  argon gas flow  computer simulation  oxygen content  FURNACE PRESSURE   Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 期刊论文 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 Czochralski method  growth from melt  semiconductor silicon  argon gas flow  computer simulation  oxygen content  FURNACE PRESSURE