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CORC

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The effect of nonideal boundary condition on instability of THz plasma waves in quantum field-effect transistors 期刊论文
AIP Advances, 2022, 卷号: 12, 期号: 3
作者:  Zhang, Li-Ping;  Liu, Chen-Xiao;  Feng, Jiang-Xu;  Su, Jun-Yan
收藏  |  浏览/下载：17/0  |  提交时间：2022/04/21
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载：11/0  |  提交时间：2022/02/04
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/11
Evolution of the graded repair of CSF leaks and skull base defects in endonasal endoscopic tumor surgery: trends in repair failure and meningitis rates in 509 patients 期刊论文
JOURNAL OF NEUROSURGERY, 2019, 卷号: 130, 期号: 3
作者:  Conger, Andrew;  Zhao, Fan;  Wang, Xiaowen;  Eisenberg, Amalia;  Griffiths, Chester
收藏  |  浏览/下载：36/0  |  提交时间：2019/12/05
Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell 期刊论文
Solid-State Electronics, 2019, 卷号: 152, 页码: 46-52
作者:  Xu, Zhaozhao;  Liu, Donghua;  Hu, Jun;  Chen, Wenjie;  Qian, Wensheng
收藏  |  浏览/下载：2/0  |  提交时间：2019/11/19
Consolidation of viscoelastic soil by vertical drains incorporating fractional-derivative model and time-dependent loading 期刊论文
INTERNATIONAL JOURNAL FOR NUMERICAL AND ANALYTICAL METHODS IN GEOMECHANICS, 2019, 卷号: Vol.43 No.1, 页码: 239-256
作者:  Huang, Ming-hua;  Li, Jia-cheng
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates 会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:  Lou, Haijun;  Li, Wentao;  Yang, Yumei;  Lin, Xinnan
收藏  |  浏览/下载：2/0  |  提交时间：2020/11/15
High-level talent flow and its influence on regional unbalanced development in China 期刊论文
APPLIED GEOGRAPHY, 2018, 卷号: 91, 页码: 89-98
作者:  Zhou, Yang;  Guo, Yuanzhi;  Liu, Yansui
收藏  |  浏览/下载：11/0  |  提交时间：2019/05/30
A full-range analytical current model for heterojunction TFET with dual material gate 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 5213-5217
作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19

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