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Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint 期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 6
作者:  Qi, Shaocheng;  Cunha, Joao;  Guo, Tian-Long;  Chen, Peiqin;  Zaccaria, Remo Proietti
收藏  |  浏览/下载:13/0  |  提交时间:2020/12/16
Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness 期刊论文
INTERNATIONAL JOURNAL OF NANOMEDICINE, 2020, 卷号: 15, 页码: 8037-8043
作者:  Dai, Chaoqi;  Huo, Changhe;  Qi, Shaocheng;  Dai, Mingzhi;  Webster, Thomas
收藏  |  浏览/下载:14/0  |  提交时间:2020/12/16
Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate 期刊论文
INTERNATIONAL JOURNAL OF NANOMEDICINE, 2020, 卷号: 15, 页码: 6239-6245
作者:  Qi, Shaocheng;  Hu, Yongbin;  Dai, Chaoqi;  Chen, Peiqin;  Wu, Zhendong
收藏  |  浏览/下载:13/0  |  提交时间:2020/12/16
Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint 期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:  Dai, Chaoqi;  Chen, Peiqin;  Qi, Shaocheng;  Hu, Yongbin;  Song, Zhitang
收藏  |  浏览/下载:4/0  |  提交时间:2020/12/16
Recent advances in EAST physics experiments in support of steady-state operation for ITER and CFETR 期刊论文
NUCLEAR FUSION, 2019, 卷号: 59
作者:  Wan, B. N.;  Liang, Y.;  Gong, X. Z.;  Xiang, N.;  Xu, G. S.
收藏  |  浏览/下载:140/0  |  提交时间:2019/12/02
Advanced Design and Electrical Properties Simulation of Two-Dimensional Photovoltaic Devices 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 卷号: 123, 期号: 18, 页码: 11347-11350
作者:  Zhang, Qiang;  Qi, Shaocheng;  Dai, Chaozhu;  Chen, Ruowang;  Wu, Zhendong
收藏  |  浏览/下载:26/0  |  提交时间:2019/12/18
Effects of porosity on seismic velocities, elastic moduli and Poisson's ratios of solid materials and rocks 期刊论文
Journal of Rock Mechanics and Geotechnical Engineering, 2016, 卷号: 8, 期号: 1, 页码: 35
作者:  Yu, Chengbo;  Ji, Shaocheng;  Li, Qi
收藏  |  浏览/下载:5/0  |  提交时间:2021/05/25


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