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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Zhang, Xiufang[1];  Ma, Chenyue[2];  Zhao, Wei[3];  Zhang, Chenfei[4];  Wang, Guozeng[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/30 Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Xu, Jiaojiao[1];  Ma, Chenyue[2];  Zhang, Chenfei[3];  Zhang, Xiufang[4];  Wu, Wen[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/30 FinFET device  process fluctuation  vertical nonuniformity  performance variation   A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance 会议论文 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010-12-15 作者:  Guo, Xinjie[1];  Wang, Shaodi[2];  Ma, Chenyue[3];  Zhang, Chenfei[4];  Lin, Xinnan[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/30 Investigation of The NBTI Induced Mobility Degradation for Precise Circuit Aging Simulation (CPCI-S收录) 会议 作者:  Ma, Chenyue[1];  Li, Xiangbin[1];  Sun, Fu[1];  Zhang, Lining[2];  Lin, Xinnan[1] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/11 NBTI  mobility degradation  hot carrier injection  self-heating effect  coupling   Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Xu, Jiaojiao[2,3];  Ma, Chenyue[3];  Zhang, Chenfei[3];  Zhang, Xiufang[3];  Wu, Wen[1] 收藏  |  浏览/下载：7/0  |  提交时间：2019/04/15 FinFET device  process fluctuation  vertical nonuniformity  performance variation   An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Chenfei[1,2,3];  Ma, Chenyue[2,3];  Xu, Jiaojiao[1];  Wang, Ruonan[2];  Zhao, Xiaojin[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/15 Interface Trap  Gate Oxide Trap  Subthreshold Current   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15 Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intri (CPCI-S收录) 会议论文 NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING 作者:  Zhou, Xingye[1];  Zhang, Jian[1];  Zhang, Lining[1];  Ma, Chenyue[1];  He, Jin[1,2] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/17 A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs (CPCI-S收录) 会议论文 MOLECULAR SIMULATION 作者:  He, Jin[1,2,3];  Zhang, Lining[1];  Zhang, Jian[1];  Ma, Chenyue[1];  Liu, Feilong[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/17 non-classical MOS transistor  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation