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CORC

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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 1, 页码: 172-175
作者:  Luan, Chongbiao;  Li, Boting;  Zhao, Juan;  Xiao, Jinshui;  Ma, Xun
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11
Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Fu, Chen;  Liu, Huan;  Cheng, Aijie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Mo, Jianghui;  Fu, Chen;  Lv, Yuanjie;  Liu, Huan
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4surface passivation 期刊论文
Applied Physics A: Materials Science and Processing, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044
作者:  Cui, Peng;  Liu, Huan;  Lin, Wei;  Lin, Zhaojun;  Cheng, Aijie
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120
作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Superlattices and Microstructures, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/12

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