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CORC

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Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition 期刊论文
Nanoscale research letters, 2017, 卷号: 12, 页码: 172
作者:  Ding Xingwei[1];  Qin Cunping[2];  Song Jiantao[3];  Zhang Jianhua[4];  Jiang Xueyin[5]
收藏  |  浏览/下载：11/0  |  提交时间：2019/04/26
The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition (vol 12, 63, 2017) 期刊论文
NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12
作者:  Ding, Xingwei[1];  Qin, Cunping[2];  Song, Jiantao[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/26
Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator 期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 235-242
作者:  Ding, Xingwei[1];  Qin, Cunping[2];  Xu, Tao[3];  Song, Jiantao[4];  Zhang, Jianhua[5]
收藏  |  浏览/下载：10/0  |  提交时间：2019/04/24
Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 卷号: 12, 页码: 273-277
作者:  Ding, Xingwei[1];  Li, Sheng[2];  Song, Jiantao[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/24
Effect of O-2 plasma treatment on density-of-states in a-IGZO thin film transistors 期刊论文
ELECTRONIC MATERIALS LETTERS, 2017, 卷号: 13, 页码: 45-50
作者:  Ding, Xingwei[1];  Huang, Fei[2];  Li, Sheng[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：1/0  |  提交时间：2019/04/24
Erratum to: The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition (Nanoscale Research Letters, (2017), 12, 1, (63), 10.1186/s11671-017-1852-z) 期刊论文
Nanoscale Research Letters, 2017, 卷号: 12
作者:  Ding, Xingwei[1];  Qin, Cunping[2];  Song, Jiantao[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24
The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition 期刊论文
NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12, 页码: 63
作者:  Ding, Xingwei[1];  Qin, Cunping[2];  Song, Jiantao[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Performance enhancement in InZnO thin-film transistors with compounded ZrO2-Al2O3 nanolaminate as gate insulators 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 页码: 8115-8119
作者:  Zhang, Jianhua[1];  Ding, Xingwei[2];  Li, Jun[3];  Zhang, Hao[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/26
Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 卷号: 29, 页码: 326-330
作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Shi, Weimin[3];  Ding, He[4];  Zhang, Hao[5]
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/26
IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 卷号: 29, 页码: 69-75
作者:  Ding, Xingwei[1];  Zhang, Hao[2];  Zhang, Jianhua[3];  Li, Jun[4];  Shi, Weimin[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/26

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