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CORC

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Uniform fabrication of Ge nanocrystals embedded into SiO_2 film via neutron transmutation doping 期刊论文
Progress in Natural Science： Materials International, 2014, 卷号: 第24卷, 页码: P226-231
作者:  Liu Wei;  Lu Tiecheng;  Chen Qingyun;  Hu Youwen;  Dun Shaobo
收藏  |  浏览/下载：1/0  |  提交时间：2019/02/28
Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 11
作者:  Lv, Yuanjie;  Feng, Zhihong;  Han, Tingting;  Dun, Shaobo;  Gu, Guodong
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23
Neutron transmutation doping effect on the optical property of germanium nanocrystals. 期刊论文
Scripta materialia, 2009, 卷号: Vol.61 No.10, 页码: 970-973
作者:  Hu, Youwen;  Lu, Tiecheng;  Dun, Shaobo;  Hu, Qiang;  You, Caofeng
收藏  |  浏览/下载：7/0  |  提交时间：2019/03/05
Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation. 期刊论文
Materials Letters, 2008, 卷号: Vol.62 No.21-22, 页码: 3617-3619
作者:  Dun, Shaobo;  Lu, Tiecheng;  Hu, Youwen;  Hu, Qiang;  You, Caofeng
收藏  |  浏览/下载：2/0  |  提交时间：2019/03/01
Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix. 期刊论文
Journal of Luminescence, 2008, 卷号: Vol.128 No.8, 页码: 1363-1368
作者:  Dun, Shaobo;  Lu, Tiecheng;  Hu, Youwen;  Hu, Qiang;  Yu, Liuqi
收藏  |  浏览/下载：3/0  |  提交时间：2019/03/01
The Raman spectroscopy of neutron transmutation doping isotope 74Germanium nanocrystals embedded in SiO2 matrix. 期刊论文
Solid State Communications, 2007, 卷号: Vol.141 No.9, 页码: 514-518
作者:  Hu, Youwen;  Lu, Tiecheng;  Dun, Shaobo;  Hu, Qiang;  Huang, Ningkang
收藏  |  浏览/下载：2/0  |  提交时间：2019/03/01
Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation 期刊论文
Materials Research Society Symposium Proceedings, 2005, 卷号: Vol.908, 页码: 153-158
作者:  Dun, Shaobo;  Lu, Tiecheng;  Hu, Qiang;  Huang, Ningkang;  Zhang, Songbao
收藏  |  浏览/下载：3/0  |  提交时间：2019/03/26
Physical mechanism of Ge nanocrystals formed by high-dose-ion-implantation 期刊论文
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2005, 卷号: Vol.26 No.8, 页码: 1543-1548
作者:  Hu, Qiang;  Lu, Tiecheng;  Dun, Shaobo;  Zhang, Songbao;  Tang, Bin
收藏  |  浏览/下载：2/0  |  提交时间：2019/03/26

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