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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Remarks on Rawnsley's epsilon-function on the Fock-Bargmann-Hartogs domains 期刊论文 ARCHIV DER MATHEMATIK, 2019, 卷号: 112, 期号: 4 作者:  Yang, Huan;  Bi, Enchao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05 Rawnsley's epsilon-function  Fock-Bargmann-Hartogs domains  Kahler metrics  Quantization   Rawnsley's epsilon-function on some Hartogs type domains over bounded symmetric domains and its applications 期刊论文 JOURNAL OF GEOMETRY AND PHYSICS, 2019, 卷号: 135 作者:  Bi, Enchao;  Feng, Zhiming;  Su, Guicong;  Tu, Zhenhan 收藏  |  浏览/下载：0/0  |  提交时间：2019/12/05 Bergman kernels  Bounded symmetric domains  Cartan-Hartogs domains  Kahler metrics  Berezin quantization   RIGIDITY OF PROPER HOLOMORPHIC MAPPINGS BETWEEN GENERALIZED FOCK-BARGMANN-HARTOGS DOMAINS 期刊论文 PACIFIC JOURNAL OF MATHEMATICS, 2018, 卷号: 297, 期号: 2 作者:  Bi, Enchao;  Tu, Zhenhan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/05 automorphism groups  Bergman kernels  generalized Fock-Bargmann-Hartogs domains  proper holomorphic mappings   Remarks on the canonical metrics on the Cartan-Hartogs domains 期刊论文 COMPTES RENDUS MATHEMATIQUE, 2017, 卷号: 355, 期号: 7 作者:  Bi, Enchao;  Tu, Zhenhan 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05 Balanced metrics on the Fock-Bargmann-Hartogs domains 期刊论文 ANNALS OF GLOBAL ANALYSIS AND GEOMETRY, 2016, 卷号: 49, 期号: 4 作者:  Bi, Enchao;  Feng, Zhiming;  Tu, Zhenhan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05 Balanced metrics  Bergman kernels  Fock-Bargmann-Hartogs domains  Kahler metrics   The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文 Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：13/0  |  提交时间：2021/02/02 The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation   Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003 Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Aluminum  Electron mobility  Gallium nitride  High electron mobility transistors  Indium  Poisson equation  Polarization  Two dimensional electron gas