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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm 期刊论文 nanotechnology, 2015 Shi Tuanwei; Fu Mengqi; Pan Dong; Guo Yao; Zhao Jianhua; Chen Qing 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 Electrical Characteristics of Ultrathin InAs Nanowires 其他 2015-01-01 Mengqi Fu; Tuanwei Shi; Dong Pan; Jianhua Zhao; Qing Chen 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 ultrathin InAs nanowires  Ion/Ioff ratio  quantum confinements effects  mobility  contact resistance  ultrathin InAs nanowires  Ion/Ioff ratio  quantum confinements effects  mobility  contact resistance   Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文 应用物理学快报, 2014 Fu, Mengqi; Pan, Dong; Yang, Yingjun; Shi, Tuanwei; Zhang, Zhiyong; Zhao, Jianhua; Xu, H. Q.; Chen, Qing 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 INAS NANOWIRES  SEMICONDUCTOR  PERFORMANCE  DIAMETER  MOSFETS   Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm 期刊论文 nano letters, 2014 Pan, Dong; Fu, Mengqi; Yu, Xuezhe; Wang, Xiaolei; Zhu, Lijun; Nie, Shuaihua; Wang, Siliang; Chen, Qing; Xiong, Peng; von Molnar, Stephan; Zhao, Jianhua 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 InAs nanowires  pure phase  molecular-beam epitaxy  InAs nanowire-based FET  III-V NANOWIRES  FIELD-EFFECT TRANSISTORS  STACKING-FAULTS  ZINC-BLENDE  ELECTRON TRANSMISSION  GAAS NANOWIRES  GROWTH  MOBILITY  MOVPE  INP   Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy 期刊论文 Nanotechnology, 2010, 卷号: 21, 期号: 36 作者:  Zhang JP (张锦平) 收藏  |  浏览/下载：204/63  |  提交时间：2010/12/13