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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395 作者:  Xiaorong Luo;  Yang Yang;  Tao Sun;  Jie Wei;  Diao Fan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Anodes  Resistance  Current density  Silicon-on-insulator  Insulated gate bipolar transistors  Spontaneous emission  Sun  Low-loss  p-type polysilicon  self-adaptive resistance (SAR)  shorted-anode (SA)  snapback-free  silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)   A Snapback-free RC-IGBT with Si3N4 Trench and P-type Pillar 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Cui, Lei;  Zhang, Bi Jun;  Wu, Peng Fei;  Ma, Li;  Zhang, Ru Jiang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 RC-IGBT  snapback effect  Si3N4 trench  p-type pillar   A snapback-free reverse conducting IGBT with recess and floating buffer at the backside 期刊论文 2017, 卷号: 14 作者:  Xie, Jia Qiang;  Ma, Li;  Li, Wei;  Gao, Yong;  Yu, Ning Mei 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 floating field stop  IGBT  reverse-conducting  recess   Double snapback phenomena in transient power-rail ESD clamp circuits for latch-up free concerns 其他 2015-01-01 Lu, Guangyi; Wang, Yuan; Zhang, Xing 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Double Snapback Phenomena in Transient Power-rail ESD Clamp Circuits for Latch-up Free Concerns 其他 2015-01-01 Lu, Guangyi; Wang, Yuan; Zhang, Xing 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 DESIGN   A SUPERJUNCTION SNAPBACK-FREE REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR WITH ANTI-PARALLEL P-I-N DIODE (CPCI-S收录) 会议论文 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) 作者:  Yu, Ji[1];  Jiang, Frank X. C.[1];  Wei, Hang[1];  Lin, Xinnan[1] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/12