CORC

在结果中检索

CORC

浏览/检索结果: 共73条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Bioinspired Antioxidant Defense System Constructed by Antioxidants-Eluting Electrospun F127-Based Fibers 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 期号: 44, 页码: 38313-38322
作者:  Wang, Haozheng;  Xu, Xiaodong;  Chen, Runhai;  Zhao, Jiruo;  Cui, Lele
收藏  |  浏览/下载：24/0  |  提交时间：2019/04/09
Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si 期刊论文
VACUUM, 2013, 卷号: 93, 期号: 93, 页码: 22-27
作者:  Zhong, YR;  Li, BS;  Wang, BY;  Qin, XB;  Zhang, LQ
收藏  |  浏览/下载：36/0  |  提交时间：2015/10/15
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n(+)-layer 期刊论文
2012, 卷号: 21
作者:  Hu Sheng-Dong[1];  Wu Li-Juan[2];  Zhou Jian-Lin[1];  Gan Ping[1];  Zhang Bo[2]
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/28
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^＋-layer Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^＋-layer 期刊论文
2012, 卷号: 21, 页码: 445-449
作者:  胡盛东[1];  吴丽娟[2];  周建林[1];  甘平[1];  张波[2]
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/28
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n +-layer 期刊论文
2012, 卷号: 21
作者:  Hu, Sheng-Dong[1];  Wu, Li-Juan[2];  Zhou, Jian-Lin[1];  Gan, Ping[1];  Zhang, Bo[2]
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/29
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
Acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: 6
作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Precipitates and defects in silicon co-implanted with helium and oxygen 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 8, 页码: 739-744
作者:  Zhang, Y.;  Yang, Y. T.;  Zhang, L. Q.;  Li, B. S.;  Zhang, C. H.
收藏  |  浏览/下载：12/0  |  提交时间：2015/10/15
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:  Yu F
收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06
Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文
Chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: 6
作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning
收藏  |  浏览/下载：104/0  |  提交时间：2019/05/12
LEO卫星地面干扰站的设计 期刊论文
微计算机信息, 2010, 期号: 24
赵星惟; 吕源; 龚文斌; 梁旭文
收藏  |  浏览/下载：17/0  |  提交时间：2012/01/06

©版权所有 ©2017 CSpace - Powered by CSpace