CORC

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CORC

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Highly porous nano-SiC with very low thermal conductivity and excellent high temperature behavior 期刊论文
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 卷号: 38, 期号: 2, 页码: 463-467
作者:  Wan, P;  Wang, JY;  Wang, JY (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, High Performance Ceram Div, Shenyang 110016, Liaoning, Peoples R China.
收藏  |  浏览/下载：16/0  |  提交时间：2018/06/05
SEGR-and SEB-hardened structure with DSPSOI in power MOSFETs 期刊论文
2017, 卷号: 38, 期号: 12, 页码: 68-72
作者:  Zhaohuan Tang;  Xinghua Fu;  Fashun Yang;  Kaizhou Tan;  Kui Ma
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31
A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Hu, Yue; Wang, Hao; Du, Caixia; Ma, Miaomiao; Chan, Mansun; He, Jin; Wang, Gaofeng
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 5
作者:  Hu, Yue;  Wang, Hao;  Du, Caixia;  Ma, Miaomiao;  Chan, Mansun
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05
Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect 期刊论文
INTERNATIONAL JOURNAL OF ELECTRONICS, 2014, 卷号: 101, 期号: 1
作者:  Hu, Yue;  Wang, Gaofeng;  Chang, Sheng;  Wang, Hao;  Huang, Qijun
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/05
research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 10, 页码: -
作者:  Li Ming;  Yu Xue-Feng;  Xue Yao-Guo;  Lu Jian;  Cui Jiang-Wei
收藏  |  浏览/下载：21/0  |  提交时间：2012/11/29
部分耗尽绝缘层附着硅静态随机存储器总剂量辐射损伤效应的研究 期刊论文
物理学报, 2012, 卷号: 61, 期号: 10, 页码: 323-329
作者:  李明;  余学峰;  薛耀国;  卢健;  崔江维
收藏  |  浏览/下载：16/0  |  提交时间：2012/11/29
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n(+)-layer 期刊论文
2012, 卷号: 21
作者:  Hu Sheng-Dong[1];  Wu Li-Juan[2];  Zhou Jian-Lin[1];  Gan Ping[1];  Zhang Bo[2]
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/28
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^＋-layer Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n^＋-layer 期刊论文
2012, 卷号: 21, 页码: 445-449
作者:  胡盛东[1];  吴丽娟[2];  周建林[1];  甘平[1];  张波[2]
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/28
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n +-layer 期刊论文
2012, 卷号: 21
作者:  Hu, Sheng-Dong[1];  Wu, Li-Juan[2];  Zhou, Jian-Lin[1];  Gan, Ping[1];  Zhang, Bo[2]
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/29

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