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CORC

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Heavy ion irradiation induced hard error in MTJ of the MRAM memory array 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 7
作者:  Zhao, P. X.;  Liu, T. Q.;  Cai, C.;  Li, D. Q.;  Ji, Q. G.
收藏  |  浏览/下载：7/0  |  提交时间：2022/01/19
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860
作者:  Wu, Bi;  Zhang, Beibei;  Cheng, Yuanqing;  Wang, Ying;  Liu, Dijun
收藏  |  浏览/下载：70/0  |  提交时间：2019/12/10
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 页码: 1851-1860
作者:  Wu, Bi;  Zhang, Beibei;  Cheng, Yuanqing;  Wang, Ying;  Liu, Dijun
收藏  |  浏览/下载：16/0  |  提交时间：2019/12/30
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
作者:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
收藏  |  浏览/下载：17/0  |  提交时间：2018/08/07
High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 页码: 343-346
作者:  Wang, Zhaohao;  Zhang, Lei;  Wang, Mengxing;  Wang, Zilu;  Zhu, Daoqian
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30
A spin Hall effect-based multi-level cell for MRAM 会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:  Shi, Qian;  Wang, Zhaohao;  Gao, Yuqian;  Chang, Liang;  Kang, Wang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30
Evaluation of Spin-Hall-assisted STT-MRAM for Cache Replacement 会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:  Chang, Liang;  Wang, Zhaohao;  Gao, Yuqian;  Kang, Wang;  Zhang, Youguang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30
Exploring the Use of Emerging Nonvolatile Memory Technologies in Future FPGAs 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2013, 卷号: 21, 期号: [db:dc_citation_issue], 页码: 771-775
作者:  Pan, Yangyang;  Li, Yiran;  Sun, Hongbin;  Xu, Wei;  Zheng, Nanning
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/10
Micromagnetic studies of domain structures and switching properties in a magnetoresistive random access memory cell 会议论文
JOURNAL OF APPLIED PHYSICS, 49th Annual Conference on Magnetism and Magnetic Materials, Jacksonville, FL, Web of Science
Wu, GG; Yu, JA; Wei, FL; Liu, XX; WEi, D
收藏  |  浏览/下载：2/0
Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 95, 期号: 2, 页码: 764
Han, XF; Yu, ACC
收藏  |  浏览/下载：12/0  |  提交时间：2013/09/24

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