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Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 12, 页码: 125022
作者:  Yang, Xinju;  Jia QJ(贾全杰);  Jiang, Zuimin;  Jia, Quanjie;  Zhong, Zhenyang
收藏  |  浏览/下载：56/0  |  提交时间：2019/10/11
Influence of gaasbi matrix on optical and structural properties of inas quantum dots 期刊论文
Nanoscale research letters, 2016, 卷号: 11, 期号: 1
作者:  Wang,Peng;  Pan,Wenwu;  Wu,Xiaoyan;  Liu,Juanjuan;  Cao,Chunfang
收藏  |  浏览/下载：31/0  |  提交时间：2019/05/09
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 卷号: 31, 期号: 6
作者:  Jahn, U;  Musolino, M;  Lahnemann, J;  Dogan, P;  Garrido, SF
收藏  |  浏览/下载：14/0  |  提交时间：2017/03/11
High-resolution scanning tunneling microscopy imaging of Si(111)-7 x 7 structure and intrinsic molecular states 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 卷号: 26, 期号: 39
Guo, HM; Wang, YL; Du, SX; Gao, HJ
收藏  |  浏览/下载：24/0  |  提交时间：2015/04/14
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate 期刊论文
http://dx.doi.org/10.1016/j.jcrysgro.2013.04.021, 2013
Qi, Dongfeng; Liu, Hanhui; Chen, Songyan; Li, Cheng; Lai, Hongkai; 陈松岩; 李成; 赖虹凯
收藏  |  浏览/下载：2/0  |  提交时间：2015/07/22
Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD 期刊论文
2012
Chen Cheng-Zhao; Zheng Yuan-Yu; Huang Shi-Hao; Li Cheng; Lai Hong-Kai; 赖洪凯; Chen Song-Yan; 陈松岩
收藏  |  浏览/下载：3/0  |  提交时间：2013/04/15
硅基低位错密度厚锗外延层的UHV/CVD法生长 期刊论文
2012
陈城钊; 郑元宇; 黄诗浩; 李成; 赖虹凯; 陈松岩
收藏  |  浏览/下载：4/0  |  提交时间：2016/05/17
Mocvd growth of a-plane inn films on r-al2o3 with different buffer layers 期刊论文
Journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Zhang, Biao;  Song, Huaping;  Wang, Jun;  Jia, Caihong;  Liu, Jianming
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12

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