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科研机构
北京大学 [4]
化学研究所 [1]
武汉大学 [1]
湖南大学 [1]
内容类型
期刊论文 [6]
其他 [1]
发表日期
2019 [2]
2016 [1]
2015 [2]
2010 [1]
2007 [1]
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Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 2
作者:
Chen, Xue
;
Zhang, Guozhen
;
Wan, Jiaxian
;
Guo, Tao
;
Li, Lei
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/12/05
aluminum
atomic layer deposition
bottom gate/top contacts
oxide
thin-film transistors
zinc oxide
Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition
期刊论文
Advanced Electronic Materials, 2019, 卷号: Vol.5 No.2
作者:
Xue Chen
;
Guozhen Zhang
;
Jiaxian Wan
;
Tao Guo
;
Lei Li
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/17
aluminum
atomic
layer
deposition
bottom
gate/top
contacts
oxide
thin‐film
transistors
zinc
oxide
Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts
期刊论文
ELECTRONICS LETTERS, 2016
Zhang, Yi
;
Han, Dedong
;
Huang, Lingling
;
Dong, Junchen
;
Cong, Yingying
;
Cui, Guodong
;
Zhang, Xiaomi
;
Zhang, Xing
;
Zhang, Shengdong
;
Wang, Yi
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
thin film transistors
electrical contacts
tin
zinc compounds
indium compounds
tin compounds
tin-doped zinc oxide thin-film transistors
heterojunction source-drain contacts
bottom gate
top contact thin-film transistors
glass substrate
indium tin oxide thin films
alumni zinc oxide thin films
AZO thin films
aluminium thin films
AZO S-D electrode
saturation mobility
subthreshold slope
on-off current ratio
output characteristic
parasitic resistance
contact performance
t
New concept of planar germanium MOSFET with stacked germanide layers at source/drain
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Xu, Hao
;
Sun, Lei
;
Zhang, Yi-Bo
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
HIGH-KAPPA GATE
SCHOTTKY SOURCE/DRAIN
METAL GATE
MOBILITY
CONTACTS
SI
TECHNOLOGY
TRANSISTOR
SUBSTRATE
PMOSFETS
New concept of planar germanium MOSFET with stacked germanide layers at source/drain
其他
2015-01-01
Xu, Hao
;
Sun, Lei
;
Zhang, Yi-Bo
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/04
HIGH-KAPPA GATE
SCHOTTKY SOURCE/DRAIN
METAL GATE
MOBILITY
CONTACTS
SI
TECHNOLOGY
TRANSISTOR
SUBSTRATE
PMOSFETS
Fabrication and characterization of molecular scale field-effect transistors
期刊论文
JOURNAL OF MATERIALS CHEMISTRY, 2010, 卷号: 20, 期号: 12, 页码: 2305-2309
作者:
Cao, Lingchao
;
Chen, Shiyan
;
Wei, Dacheng
;
Liu, Yunqi
;
Fu, Lei
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/04/09
Schottky barrier MOSFET structure with silicide source/drain on buried metal
期刊论文
中国物理英文版, 2007
Li Ding-Yu
;
Sun Lei
;
Zhang Sheng-Dong
;
Wang Yi
;
Liu Xiao-Yan
;
Han Ru-Qi
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/16
Schottky barrier MOSFET
Schottky barrier
barrier height
silicide source/drain
FIELD-EFFECT TRANSISTORS
GERMANIDE
GATE
FABRICATION
THICKNESS
CONTACTS
IMPACT
SOI
S/D
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