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科研机构
半导体研究所 [9]
金属研究所 [2]
四川大学 [1]
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期刊论文 [12]
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2011 [3]
2010 [2]
2009 [1]
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2004 [2]
2002 [3]
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Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation
期刊论文
Semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: 6
作者:
Li Hui
;
Zhou Kai
;
Pang Jingbiao
;
Shao Yundong
;
Wang Zhu
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: 6
作者:
Li Hui
;
Zhou Kai
;
Pang Jingbiao
;
Shao Yundong
;
Wang Zhu
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2021/02/02
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Evaluation of thermal radiation dependent performance of gasb thermophotovoltaic cell based on an analytical absorption coefficient model
期刊论文
Solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
作者:
Wang, Y.
;
Chen, N. F.
;
Zhang, X. W.
;
Huang, T. M.
;
Yin, Z. G.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
Thermophotovoltaic
Gallium antimonide
Absorption coefficient
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model
期刊论文
solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Wang Y (Wang Y.)
;
Chen NF (Chen N. F.)
;
Zhang XW (Zhang X. W.)
;
Huang TM (Huang T. M.)
;
Yin ZG (Yin Z. G.)
;
Wang YS (Wang Y. S.)
;
Zhang H (Zhang H.)
收藏
  |  
浏览/下载:190/22
  |  
提交时间:2010/09/07
Thermophotovoltaic
Gallium antimonide
Absorption coefficient
Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
Journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126
作者:
Li, Hui
;
Wang, Zhu
;
Zhou, Kai
;
Pang, Jingbiao
;
Ke, Junyu
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Gasb
Proton irradiation
Defects
Positron lifetime
Photoluminescence
Identification of vacancies in electron irradiated gasb by coincidence doppler broadening spectroscopy
期刊论文
Materials letters, 2007, 卷号: 61, 期号: 4-5, 页码: 1187-1189
作者:
Shao, Y. D.
;
Wang, Z.
;
Dai, Y. Q.
;
Zhao, Y. W.
;
Tang, F. Y.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Gasb
Coincidence doppler broadening
Electron irradiation
Defect
Gallium antisite defect and residual acceptors in undoped gasb
期刊论文
Physics letters a, 2004, 卷号: 332, 期号: 3-4, 页码: 286-290
作者:
Hu, WG
;
Wang, Z
;
Su, BF
;
Dai, YQ
;
Wang, SJ
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Gasb
Coincidence doppler broadening
Positron annihilation
Defect
Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence
期刊论文
Journal of Physics: Condensed Matter, 2004, 卷号: Vol.16 NO.34, 页码: 6205-6212
作者:
Ma, SK
;
Lui, MK
;
Ling, CC
;
Fung, S
;
Beling, CD
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/02/25
RESIDUAL ACCEPTORS
INDUCED DEFECTS
NATIVE DEFECTS
SELF-DIFFUSION
P-TYPE
GASB
SEMICONDUCTORS
Gallium vacancy and the residual acceptor in undoped gasb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
Applied physics letters, 2002, 卷号: 80, 期号: 21, 页码: 3934-3936
作者:
Ling, CC
;
Mui, WK
;
Lam, CH
;
Beling, CD
;
Fung, S
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
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