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CORC

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Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 132, 期号: 9, 页码: 26-30
作者:  Wang, DK (Wang, Dengkui)[ 1 ];  Chen, BK (Chen, Bingkun)[ 1 ];  Wei, ZP (Wei, Zhipeng)[ 1 ];  Fang, X (Fang, Xuan)[ 1 ];  Tang, JL (Tang, Jilong)[ 1 ]
收藏  |  浏览/下载：58/0  |  提交时间：2019/07/23
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24
Effect of Nitrogen Passivation on Optical Properties of Te-doped GaSb 期刊论文
ACTA PHOTONICA SINICA, 2018, 卷号: Vol.47 No.3
作者:  Rong Tian-yu;  Fang Dan;  Gu Li-bin;  Fang Xuan;  Wang Deng-kui
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26
Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser 期刊论文
Nanoscience and Nanotechnology Letters, 2015, 卷号: 7, 期号: 2, 页码: 117-120
作者:  Fang, D.;  X. Fang;  Y. F. Li;  B. Yao;  H. F. Zhao
收藏  |  浏览/下载：14/0  |  提交时间：2016/07/15
Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2015, 卷号: 7, 期号: 2, 页码: 117-120
作者:  Fang, Dan[1];  Fang, Xuan[2];  Li, Yongfeng[3];  Yao, Bin[4];  Zhao, Haifeng[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/24
Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文
journal of infrared and millimeter waves, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Chen Y (Chen Yan); Deng AH (Deng Ai-Hong); Tang B (Tang Bao); Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：12/0  |  提交时间：2013/04/02
Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation 期刊论文
Semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: 6
作者:  Li Hui;  Zhou Kai;  Pang Jingbiao;  Shao Yundong;  Wang Zhu
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: 6
作者:  Li Hui;  Zhou Kai;  Pang Jingbiao;  Shao Yundong;  Wang Zhu
收藏  |  浏览/下载：15/0  |  提交时间：2021/02/02
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7
作者:  Li Hui;  Zhou Kai;  Pang Jingbiao;  Shao Yundong;  Wang Zhu
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05

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