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	Epitaxial growth of Ge film on 6H-SiC(0001) by LPCVD 期刊论文 2016, 卷号: 10, 页码: 737-739 作者: Han, Y. L.; Pu, H. B.; Zang, Y.; Li, L. B. 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/12/20 SiC/Ge heterostructure LPCVD Oswald coalescence Stranski-Krastanow mode
	High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability 期刊论文 http://dx.doi.org/10.1038/srep05166, 2014 Yang, Weihuang; Li, Jinchai; Zhang, Yong; Huang, Po-Kai; Lu, Tien-Chang; Kuo, Hao-Chung; Li, Shuping; Yang, Xu; Chen, Hangyang; Liu, Dayi; Kang, Junyong; 张勇; 李书平; 康俊勇收藏 \| 浏览/下载：4/0 \| 提交时间：2015/07/22 CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES STRANSKI-KRASTANOW GROWTH MOLECULAR-BEAM EPITAXY GAN ALN ALGAN SAPPHIRE EMISSION LAYER
	Monitoring quantum dot growth by in-situ cantilever systems 会议论文 Duan, H.L.; Wang, Y.; Yi, X. 收藏 \| 浏览/下载：1/0 \| 提交时间：2015/11/13
	Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者: Xu B; Jin P 收藏 \| 浏览/下载：37/0 \| 提交时间：2010/03/09 INAS
	Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions 期刊论文 Thin solid films, 2005, 卷号: 476, 期号: 1, 页码: 68-72 作者: Sun, J; Jin, P; Wang, ZG; Zhang, HZ; Wang, ZY 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/05/12 Liquid phase epitaxy (lpe) Scanning electron microscopy (sem) Molecular beam epitaxy (mbe) Atomic force microscopy (afm)
	Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration the size of dots becomes larger and the density decreases which is explained by virtue of the surface free energy.
	Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions 期刊论文 thin solid films, 2005, 卷号: 476, 期号: 1, 页码: 68-72 Sun, J; Jin, P; Wang, ZG; Zhang, HZ; Wang, ZY; Hu, LZ 收藏 \| 浏览/下载：34/0 \| 提交时间：2010/03/17 liquid phase epitaxy (LPE)
	Growth of nano-structures on composition-modulated inalas surfaces 期刊论文 Journal of physics-condensed matter, 2004, 卷号: 16, 期号: 43, 页码: 7603-7610 作者: Zhao, FA; Chen, YH; Ye, XL; Jin, P; Xu, B 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/05/12
	Fabrication of ZnCdSe quantum dots under Stranski-Krastanow mode 期刊论文 Journal of Crystal Growth, 2004, 卷号: 265, 期号: 3—4, 页码: 541-547 Shan C. X.; Fan X. W.; Zhang J. Y.; Zhang Z. Z.; Wang X. H.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Lu S. Z. 收藏 \| 浏览/下载：16/0 \| 提交时间：2012/10/21
	Growth of nano-structures on composition-modulated InAlAs surfaces 期刊论文 journal of physics-condensed matter, 2004, 卷号: 16, 期号: 43, 页码: 7603-7610 作者: Jin P; Ye XL; Xu B 收藏 \| 浏览/下载：190/58 \| 提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY

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