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CORC

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Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions 期刊论文
semiconductor science and technology, 2009
Liu, Feng; Zhang, Lining; Zhang, Jian; He, Jin; Chan, Mansun
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13
Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Wang, N; Li, N; Liu, ZL; Yu, F; Li, GH
收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09
SOI  MOSFET  
Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation 期刊论文
ieee电子器件汇刊, 2005
Du, G; Liu, XY; Xia, ZL; Kang, JF; Wang, Y; Han, RQ; Yu, HY; Kwong, DL
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究 期刊论文
半导体学报, 2002
何进; 张兴; 黄如; 王阳元
收藏  |  浏览/下载：2/0  |  提交时间：2015/10/23
Forward gated-diode monitoring of F-N stressing-Induced interface traps of NMOSFET/SOI 期刊论文
pan tao ti hsueh paochinese journal of semiconductors, 2001
He, Jin; Huang, Ai-Hua; Zhang, Xing; Huang, Ru
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/17
Extracting F-N Stress-Induced Interface States in SOI NMOSFET's by Forward Gated-Diode 其他
2001-01-01
Jin He; Xing Zhang; Aihua Huang; Ru Huang; Yangyuan Wang
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Extracting F-N stress-induced interface states in SOINMOSFET's by forward gated-diode 其他
2001-01-01
He, J; Zhang, X; Huang, AH; Huang, R; Wang, YY
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/13
Theoretical analysis of edge parasitic transistor effects in mesa-isolated fully-depleted SOI NMOS devices 期刊论文
international journal of electronics, 1998
Wang, HM; Xi, XM; Zhang, X; Wang, YY
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10

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