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Chemical sintering reduced grain boundary defects for stable planar perovskite solar cells 期刊论文
Nano Energy, 2019, 卷号: 56, 页码: 741-750
作者:  Xi, Jun;  Xi, Kai;  Sadhanala, Aditya;  Zhang, Kelvin H.L.;  Li, Guangru
收藏  |  浏览/下载:9/0  |  提交时间:2019/11/19
Trapping devices of nematode-trapping fungi: formation, evolution, and genomic perspectives 期刊论文
BIOLOGICAL REVIEWS, 2017, 卷号: 92, 期号: X, 页码: 357-368
作者:  Su H;  Zhao Y;  Zhang KQ[*];  Yang JK[*];  Zhou J
收藏  |  浏览/下载:26/0  |  提交时间:2015/11/06
Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 117, 期号: 3, 页码: 1125-1130
作者:  Wang, Ying;  Chen, Jiangshan;  Huang, Jinying;  Dai, Yanfeng;  Zhang, Zhiqiang
收藏  |  浏览/下载:17/0  |  提交时间:2019/04/09
Density of state determination of two types of intra-gap traps in dye-sensitized solar cells and its influence on device performance 期刊论文
physical chemistry chemical physics, 2014
Wang, Yi; Wu, Dapeng; Fu, Li-Min; Ai, Xi-Cheng; Xu, Dongsheng; Zhang, Jian-Ping
收藏  |  浏览/下载:1/0  |  提交时间:2015/11/11
Linear drain current degradation of n-MOSFET under hot carrier stress with forward substrate bias 期刊论文
guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics, 2006
Zhao, Yao; Xu, Mingzhen; Tan, Changhua
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/17
A new observation of hot-carrier induced interface traps spatial distribution in 0.135 mu m n-MOSFET by gate-diode 其他
2004-01-01
Zhao, Y; Xu, MZ; Tan, CH
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/13
A new observation of hot-carrier induced interface traps spatial distribution in 0.135m n-MOSFET by Gate-Diode method 其他
2004-01-01
Zhao, Yao; Xu, Mingzhen; Tan, Changhua
收藏  |  浏览/下载:6/0  |  提交时间:2015/11/13
Hot carrier induced degradation in mesa-isolated n-channel SOI MOSFETs operating in a Bi-MOS mode 期刊论文
ieee电子器件汇刊, 2001
Huang, R; Wang, JY; Zhang, X; Wang, YY
收藏  |  浏览/下载:2/0  |  提交时间:2015/11/10


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