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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Large area MoS2/Si heterojunction-based solar cell through sol-gel method 期刊论文 MATERIALS LETTERS, 2019, 卷号: Vol.238, 页码: 13-16 作者:  Xu, Heju;  Xin, Litao;  Liu, Linlin;  Pang, Dequan;  Jiao, Yuxiao 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 MoS2  Solar cell  Thin film  Sol-gel method   Large area MoS/Si heterojunction-based solar cell through sol-gel method 期刊论文 Materials Letters, 2019, 卷号: Vol.238, 页码: 13-16 作者:  Heju Xu;  Litao Xin;  Linlin Liu;  Dequan Pang;  Yuxiao Jiao 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/13 MoS2  Solar  cell  Thin  film  Sol-gel  method   In situ ion exchange synthesis of MoS2/g-C3N4 heterojunctions for highly efficient hydrogen production 期刊论文 NEW JOURNAL OF CHEMISTRY, 2018, 卷号: 42, 期号: 2, 页码: 910-917 作者:  Wang, Min;  Ju, Peng;  Zhao, Yun;  Li, Jiajia;  Han, Xiuxun 收藏  |  浏览/下载：5/0  |  提交时间：2019/08/19 In situ ion exchange synthesis of MoS2/g-C3N4 heterojunctions for highly efficient hydrogen production 期刊论文 NEW JOURNAL OF CHEMISTRY, 2018, 卷号: 42, 期号: 2, 页码: 910-917 作者:  Wang, Min;  Ju, Peng;  Zhao, Yun;  Li, Jiajia;  Han, Xiuxun 收藏  |  浏览/下载：3/0  |  提交时间：2018/12/07 Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction 会议论文 International Conference Machinery, Electronics and Control Simulation, ICMECS 2014, Weihai, Shandong Province, China, September 27, 2014 - September 28, 2014 作者:  Cao, HN;  Zhang, ZY;  Si, MS;  Zhang, F;  Wang, YH 收藏  |  浏览/下载：3/0  |  提交时间：2015/07/31 Indirect-direct band gap transition  MoS2/WS2 heterojunction  Van der Waals interaction engineering  First principles calculations   Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction 会议论文 INTERNATIONAL CONFERENCE MACHINERY, ELECTRONICS AND CONTROL SIMULATION, 2014-01-01 作者:  Cao, Haining[1];  Zhang, Zhiya[2];  Si, Mingsu[3];  Zhang, Feng[4];  Wang, Yuhua[5] 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/23 Indirect-direct band gap transition  MoS2/WS2 heterojunction  Van der Waals interaction engineering  First principles calculations   Indirect-direct band gap transition by van der waals interaction engineering in MoS2/WS2 bilayer heterojunction 会议论文 International Conference Machinery, Electronics and Control Simulation, ICMECS 2014, September 27, 2014 - September 28, 2014 作者:  Cao, Hai Ning;  Zhang, Zhi Ya;  Si, Ming Su;  Zhang, Feng;  Wang, Yu Hua 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31