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CORC

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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode 期刊论文
Photonics Research, 2021, 卷号: 9, 期号: 10, 页码: 1907-1915
作者:  L. Guo;  K. E. Jiang;  X. Sun;  Z. Zhang;  J. Ben
收藏  |  浏览/下载：3/0  |  提交时间：2022/06/13
Uniting a III-Nitride Transmitter, Waveguide, Modulator, and Receiver on a Single Chip 期刊论文
Advanced Engineering Materials, 2021, 卷号: 23, 期号: 12
作者:  M. Xie;  Y. Jiang;  X. Gao;  W. Cai;  J. Yuan
收藏  |  浏览/下载：2/0  |  提交时间：2022/06/13
Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters 期刊论文
ACS APPLIED NANO MATERIALS, 2020, 卷号: 3, 期号: 6, 页码: 5335-5342
作者:  Xu, Houqiang;  Jiang, Jie'an;  Dai, Yijun;  Cui, Mei;  Li, Kuang-hui
收藏  |  浏览/下载：70/0  |  提交时间：2020/12/16
150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures 期刊论文
OPTICAL MATERIALS, 2019, 卷号: 97, 期号: 11, 页码: 1-6
作者:  Lei, QQ (Lei, Q. Q.)[ 1,2 ];  Aierken, A (Aierken, A.)[ 2,3 ];  Sailai, M (Sailai, M.)[ 2 ];  Heini, M (Heini, M.)[ 2,4 ];  Shen, XB (Shen, X. B.)[ 2 ]
收藏  |  浏览/下载：35/0  |  提交时间：2020/01/10
Full-duplex light communication with a monolithic multicomponent system 期刊论文
LIGHT-SCIENCE & APPLICATIONS, 2018, 卷号: 7, 页码: 7
作者:  Amano, Hiroshi;  Li, Dabing;  Sun, Xiaojuan;  Liu, Yuhuai;  Gao, Xumin
收藏  |  浏览/下载：37/0  |  提交时间：2019/08/26
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.
收藏  |  浏览/下载：5/0  |  提交时间：2019/09/17
Monolithic WDM vcsels with spatially varying gain peak and fabry perot wavelength 专利
专利号: WO2016195695A1, 申请日期: 2016-12-08, 公开日期: 2016-12-08
作者:  MATHI, SAGI;  TAN, MICHAEL RENNE TY
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/31
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/11
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  Chen, P;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/11
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy 期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6
作者:  Bao, W;  Su, ZC;  Zheng, CC;  Ning, JQ(宁吉强);  Xu, SJ
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/11

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