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AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
Spectral calibration of medical microscopic imaging spectrometer 期刊论文
Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2016, 卷号: 24, 期号: 5
作者:  Wei, W.;  J.-C. Cui;  Y.-G. Tang;  C. Sun and M.-Z. Pan
收藏  |  浏览/下载：13/0  |  提交时间：2017/09/11
Efficient Perovskite Solar Cells Based on Multilayer Transparent Electrodes through Morphology Control 期刊论文
Journal of Physical Chemistry C, 2016, 卷号: 120, 期号: 47
作者:  Liu, X.;  X. Y. Guo;  Z. H. Gan;  N. Zhang and X. Y. Liu
收藏  |  浏览/下载：21/0  |  提交时间：2017/09/11
Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 2
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/11
Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 5, 页码: 5
作者:  Shi, M;  Chen, P;  Zhao, DG;  Jiang, DS;  Zheng, J
收藏  |  浏览/下载：20/0  |  提交时间：2015/12/31
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
THIN SOLID FILMS, 2014, 卷号: 564, 期号: 0, 页码: 135-139
作者:  Yang H(杨辉)
收藏  |  浏览/下载：18/0  |  提交时间：2014/12/02
Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP 期刊论文
Optoelectronics Letters, 2014, 卷号: 10, 期号: 4, 页码: 269-272
Liu X.; Cao L.-z.; Song H.; Jiang H.
收藏  |  浏览/下载：13/0  |  提交时间：2015/04/24
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Xu, K (徐科);  Wang, JF (王建峰);  Zhang, M (张敏);  Huang, J (黄俊)
收藏  |  浏览/下载：15/0  |  提交时间：2012/08/23

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