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生态环境研究中心 [3]
半导体研究所 [2]
寒区旱区环境与工程研... [1]
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Quantifying the effects of precipitation, vegetation, and land preparation techniques on runoff and soil erosion in a Loess watershed of China
期刊论文
SCIENCE OF THE TOTAL ENVIRONMENT, 2019, 卷号: 652, 页码: 755-764
作者:
Yu, Yang
;
Wei, Wei
;
Chen, Liding
;
Feng, Tianjiao
;
Daryanto, Stefani
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/10/19
Precipitation
Vegetation
Land preparation techniques
Runoff
Loess Plateau
Network analysis
Effects of land preparation and plantings of vegetation on soil moisture in a hilly loess catchment in China
期刊论文
LAND DEGRADATION & DEVELOPMENT, 2018, 卷号: 29, 期号: 5, 页码: 1427-1441
作者:
Keesstra, Saskia D.
;
Yang, Yu
;
Chen Liding
;
Wei Wei
;
Feng Tianjiao
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  |  
浏览/下载:26/0
  |  
提交时间:2019/06/17
land preparation
soil moisture
the Loess Plateau
vegetation type
Land preparation and vegetation type jointly determine soil conditions after long-term land stabilization measures in a typical hilly catchment, Loess Plateau of China
期刊论文
JOURNAL OF SOILS AND SEDIMENTS, 2017, 卷号: 17, 期号: 1, 页码: 144-156
作者:
Feng, Tianjiao
;
Wang, Lixin
;
Yu, Yang
;
Wei, Wei
;
Chen, Liding
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  |  
浏览/下载:20/0
  |  
提交时间:2018/07/20
Land Preparation
Loess Plateau
Soil Conditions
Soil Organic Matter
Soil Particle Distribution
Vegetation Restoration
Dynamic analysis of eco-environmental changes based on remote sensing and geographic information system: an example in Longdong region of the Chinese Loess Plateau
期刊论文
ENVIRONMENTAL GEOLOGY, 2007, 卷号: 53, 期号: 3, 页码: 589-598
作者:
Liu, L. C.
;
Dong, X. F.
;
Wang, J. H.
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  |  
浏览/下载:16/0
  |  
提交时间:2019/10/08
remote sensing
geographic information system (GIS)
eco-environmental change
the Longdong region of the Chinese Loess Plateau
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1062-1068
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:77/6
  |  
提交时间:2010/08/12
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
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