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Raman spectroscopic determination of hole concentration in undoped GaAsBi 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 卷号: 34, 期号: 1, 页码: 15008
作者:  Zhu Sixin;  Qiu Weiyang;  Wang Han;  Lin Tie;  Chen Pingping
收藏  |  浏览/下载:35/0  |  提交时间:2019/11/13
Determination of the transport properties in 4h-sic wafers by raman scattering measurement 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: 6
作者:  Sun Guo-Sheng;  Liu Xing-Fang;  Wu Hai-Lei;  Yan Guo-Guo;  Dong Lin
收藏  |  浏览/下载:25/0  |  提交时间:2019/05/12
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: 6
作者:  Sun Guo-Sheng;  Liu Xing-Fang;  Wu Hai-Lei;  Yan Guo-Guo;  Dong Lin
收藏  |  浏览/下载:10/0  |  提交时间:2021/02/02
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: 6
作者:  Sun Guo-Sheng;  Liu Xing-Fang;  Wu Hai-Lei;  Yan Guo-Guo;  Dong Lin
收藏  |  浏览/下载:12/0  |  提交时间:2021/02/02
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载:38/3  |  提交时间:2011/07/05


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