CORC

在结果中检索

CORC

浏览/检索结果: 共35条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 页码: 7468–7472
作者:  Xiantong Zheng ;   Wei Huang ;   Hongwei Liang ;   Ping Wang ;   Yu Liu ;   Zhaoying Chen ;   Ping Liang ;   Mo Li ;   Jian Zhang ;   Yonghai Chen ;   Xinqiang Wang
收藏  |  浏览/下载：29/0  |  提交时间：2019/11/14
Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 页码: 7468-7472
作者:  Zheng, Xiantong;  Huang, Wei;  Liang, Hongwei;  Wang, Ping;  Liu, Yu
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/02
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.
收藏  |  浏览/下载：5/0  |  提交时间：2019/09/17
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/11
Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  Jiang, T;  Xu, SR;  Zhang, JC;  Li, PX;  Huang, J(黄俊)
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/11
Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 卷号: 32, 期号: 5
作者:  Yang, J;  Yang H(杨辉)
收藏  |  浏览/下载：28/0  |  提交时间：2014/12/01
Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells 期刊论文
http://dx.doi.org/10.1088/1674-1056/23/5/054211, 2014
Liang Ming-Ming; Weng Guo-En; Zhang Jiang-Yong; Cai, Xiao-Mei; Lu Xue-Qin; Ying Lei-Ying; Zhang Bao-Ping; 张江勇; 张保平
收藏  |  浏览/下载：4/0  |  提交时间：2015/07/22
Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 15
作者:  Yang, H(杨辉);  Li, DY(李德尧);  Zhang, SM(张书明);  Wang, HB(王怀兵);  Liu, JP（刘建平）
收藏  |  浏览/下载：23/0  |  提交时间：2014/01/15
High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 8
作者:  Yang, H(杨辉);  Wang, JF(王建峰)
收藏  |  浏览/下载：15/0  |  提交时间：2014/01/13
Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells 期刊论文
CHINESE PHYSICS LETTERS, 2013, 卷号: 30, 期号: 7, 页码: -
作者:  Zhang Xiao-Fu;  Li Yu-Dong;  Guo Qi;  Lu Wu;  Lu, W (Lu Wu)
收藏  |  浏览/下载：19/0  |  提交时间：2013/11/07

©版权所有 ©2017 CSpace - Powered by CSpace