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20.8W TM polarized GaAsP laser diodes of 808nm wavelength 期刊论文
Proceedings of SPIE - The International Society for Optical Engineering, 2013, 卷号: 8605
作者:  Li, Peixu;  Jiang, Kai;  Zhang, Xin;  Tang, Qingmin;  Xia, Wei
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
MOCVD growth of GaAsP/InGa(Al)P/GaAs high power 808 nm laser diode material with tensile strained quantum well 期刊论文
Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2012, 卷号: 41, 期号: SUPPL. 1, 页码: 285-288
作者:  Jiang, Kai;  Li, Pei-Xu;  Zhang, Xin;  Li, Shu-Qiang;  Xia, Wei
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23
High power 808 nm laser diode with 62% wall-plug efficiency 期刊论文
Guangxue Xuebao/Acta Optica Sinica, 2011, 卷号: 31, 期号: SUPPL.1
作者:  Li, Peixu;  Jiang, Kai;  Zhang, Xin;  Tang, Qingmin;  Xia, Wei
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23
Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars 期刊论文
Ieee Photonics Technology Letters, 2009, 卷号: 21, 期号: 14, 页码: 963-965
Wang Y.; Qin L.; Zhang Y.; Tian Z.; Yang Y.; Li Z. J.; Wang C.; Yao D.; Yin H. H.; Liu Y.; Wang L. J.
收藏  |  浏览/下载：15/0  |  提交时间：2012/10/21
Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition 期刊论文
Japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031
作者:  Zhong, Li;  Ma, Xaoyu
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  
High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang X.; Li Z.; Liu Y.; Wang Y.; Yao D.; Wang L.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L; Ma, XY
收藏  |  浏览/下载：55/0  |  提交时间：2010/03/08
Influence of gaasp insertion layers on performance of ingaasp/ingap/algaas quantum-well laser 期刊论文
Chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586
作者:  Cao Yu-Lian;  Lian Peng;  Ma Wen-Quan;  Wang Qing;  Wu Xu-Ming
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文
IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China
Lu G. G.; He C. F.; Shan X. N.; Qin L.; Yan C. L.; Ning Y. Q.; Wang L. J.
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25

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