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Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate
期刊论文
materials science in semiconductor processing, 2016, 卷号: 42, 页码: 283-287
作者:
Lin, Tao
;
Sun, Ruijuan
;
Sun, Hang
;
Guo, Enmin
;
Duan, Yupeng
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2016/01/11
VECSEL
MOVPE
InGaAs
Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure
期刊论文
APPLIED SURFACE SCIENCE, 2015, 卷号: 346, 页码: 46-49
作者:
Chang, YW
;
Zhang, M
;
Deng, C
;
Men, CL
;
Chen, D
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  |  
浏览/下载:5/0
  |  
提交时间:2017/01/13
GaAs-on-insulator
MBE
Ion-cut
Selective chemical etching
Raman spectroscopy of epitaxial topological insulator bi2te3 thin films on gan substrates
期刊论文
Modern physics letters b, 2015, 卷号: 29, 期号: 15, 页码: 10
作者:
Xu, Hao
;
Song, Yuxin
;
Gong, Qian
;
Pan, Wenwu
;
Wu, Xiaoyan
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  |  
浏览/下载:30/0
  |  
提交时间:2019/05/10
Topological insulator
Bi2te3
Raman spectroscopy
Resonant raman scattering
Domain boundaries
Electron-phonon interaction
The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
期刊论文
http://dx.doi.org/10.1063/1.4884063, 2014
Wu, Po-Hung
;
Huang, Ying-Sheng
;
Hsu, Hung-Pin
;
Li, Cheng
;
Huang, Shi-Hao
;
Tiong, Kwong-Kau
;
李成
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  |  
浏览/下载:4/0
  |  
提交时间:2015/07/22
QUANTUM-WELL STRUCTURES
THERMAL-EXPANSION
ROOM-TEMPERATURE
ON-INSULATOR
WAVE-GUIDE
GERMANIUM
SILICON
SPECTROSCOPY
EDGE
GAAS
GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate
会议论文
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, October 28, 2014 - October 31, 2014
作者:
Chang, Yongwei
;
Chen, Da
;
Di, Zengfeng
;
Zhang, Miao
;
Yu, Wenjie
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  |  
浏览/下载:0/0
  |  
提交时间:2017/01/20
Semiconducting gallium
Bonding
Chemical bonds
Etching
Gallium arsenide
Germanium
Molecular beam epitaxy
Silicon oxides
Silicon wafers
Wafer bonding
Annealing temperatures
Bulk substrates
Chemical etching
Dose implantation
Epitaxial GaAs
High-crystalline quality
Room temperature bonding
Sacrificial layer
GaAs-ON-INSULATOR FABRICATED VIA ION-CUT IN EPITAXIAL GaAs/Ge SUBSTRATE
会议论文
IEEE International Conference on Solid-State and Integrated Circuit Technology, Guilin, PEOPLES R CHINA, OCT 28-31, 2014
作者:
Chang, YW
;
Chen, D
;
Di, ZF
;
Zhang, M
;
Yu, WJ
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  |  
浏览/下载:2/0
  |  
提交时间:2017/01/20
Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film
期刊论文
CHIN.PHYS.LETT., 2013, 卷号: 30, 期号: 10
作者:
GUOJian-Hua QIUFeng ZHANGYun DENGHui-Yong HUGu-Jin LIXiao-Nan YUGuo-Lin DAINing
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  |  
浏览/下载:8/0
  |  
提交时间:2014/11/10
Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction
期刊论文
aip advances, 2013, 卷号: 3, 期号: 7, 页码: 072112
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo
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  |  
浏览/下载:30/0
  |  
提交时间:2014/05/16
Gating the charge state of single Fe dopants in the topological insulator Bi2Se3 with a scanning tunneling microscope
期刊论文
PHYSICAL REVIEW B, 2012, 卷号: 86, 期号: 4
Song, CL
;
Jiang, YP
;
wang, yl
;
Li, Z
;
Wang, LL
;
He, K
;
Chen, X
;
Ma, XC
;
Xue, QK
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/09/17
SURFACE-STATES
GAAS
Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 3, 页码: 396-399
作者:
Han, L. H.
;
Zhang, L. Q.
;
Zhang, C. H.
;
Yang, Y. T.
;
Jin, Y. F.
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  |  
浏览/下载:14/0
  |  
提交时间:2015/10/15
Highly charged ions
Potential energy
Surface erosion
AFM
Gallium nitride (GaN)
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